Fabrication of minority-carrier-limited n-Si/insulator/metal diodes

Amit Kumar, Mark D. Rosenblum, Delwyn L. Gilmore, Bruce J. Tufts, Mary L. Rosenbluth, Nathan S. Lewis

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19 Citations (Scopus)

Abstract

A photoelectrochemical anodization technique has been used to fabricate n-Si/insulator/metal (MIS) diodes with improved electrical properties. MIS structures fabricated with Au have provided the first experimental observation of a solid-state n-Si surface barrier device whose open circuit voltage V oc is controlled by minority-carrier bulk diffusion/recombination processes. For these diodes, variation of the minority-carrier diffusion length and majority-carrier dopant density produced changes in Voc that were in accord with bulk diffusion/recombination theory. Additionally, the variation in Voc in response to changes in the work function of the metal overlayer indicated that these MIS devices were not subject to the Fermi level pinning restrictions observed for n-Si Schottky structures. X-ray photoelectron spectroscopic characterization of the anodically grown insulator indicated 8.2±0.9 Å of a strained SiO2 layer as the interfacial insulator resulting from the photoanodization process.

Original languageEnglish
Pages (from-to)1919-1921
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number19
DOIs
Publication statusPublished - Dec 1 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kumar, A., Rosenblum, M. D., Gilmore, D. L., Tufts, B. J., Rosenbluth, M. L., & Lewis, N. S. (1990). Fabrication of minority-carrier-limited n-Si/insulator/metal diodes. Applied Physics Letters, 56(19), 1919-1921. https://doi.org/10.1063/1.103044