Fabrication of Thin Films of α-Fe2O3 via Atomic Layer Deposition Using Iron Bisamidinate and Water under Mild Growth Conditions

Jason R. Avila, Dong Wook Kim, Martino Rimoldi, Omar K. Farha, Joseph T. Hupp

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Atomic layer deposition (ALD) has been shown to be an excellent method for depositing thin films of iron oxide. With limited iron precursors available, the methods widely used require harsh conditions such as high temperatures and/or the use of oxidants such as ozone or peroxide. This letter aims to show that bis(N,N′-di-t-butylacetamidinato) iron(II) (iron bisamidinate or FeAMD) is an ideal ALD precursor because of its reactivity with water and relative volatility. Using in situ QCM analysis, we show outstanding conformal self-limiting growth of FeOx using FeAMD and water at temperatures lower than 200 °C. By annealing thin films of FeOx at 500 °C, we observe the formation of α-Fe2O3, confirming that we can use FeAMD to fabricate thin films of catalytically promising iron oxide materials using moderate growth conditions. (Figure Presented).

Original languageEnglish
Pages (from-to)16138-16142
Number of pages5
JournalACS Applied Materials and Interfaces
Volume7
Issue number30
DOIs
Publication statusPublished - Aug 5 2015

Fingerprint

Atomic layer deposition
Iron
Iron oxides
Fabrication
Thin films
Water
Ozone
Peroxides
Oxidants
Annealing
Temperature
ferric oxide

Keywords

  • atomic layer deposition
  • hematite
  • in situ
  • iron bisamidinate
  • iron oxide
  • quartz crystal microbalance

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Fabrication of Thin Films of α-Fe2O3 via Atomic Layer Deposition Using Iron Bisamidinate and Water under Mild Growth Conditions. / Avila, Jason R.; Kim, Dong Wook; Rimoldi, Martino; Farha, Omar K.; Hupp, Joseph T.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 30, 05.08.2015, p. 16138-16142.

Research output: Contribution to journalArticle

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