Fast ion transport in nanoscaled thin film cerium oxide

Sathya Swaroop, Martin Kilo, Anna Eden Kossoy, Igor Lubomirsky, Ilan Riess

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Dense CeO2 layers of 350 nm thickness, with columnar grains of size 25 nm, were RF-sputtered on silicon. 18O isotope exchange in the temperature range from 200 to 575 °C showed surface exchange at CeO2 as the rate-determining step, while diffusion through the polycrystalline thin layer was fast. The surface exchange coefficients controlled by surface or grain boundary processes were found to be ks = 2.7 × 10- 8 exp (frac(- 0.3 eV, k T)) cm s- 1 or kgb = 1 × 10- 9 exp (frac(- 0.3 eV, k T)) cm s- 1. Comparison with literature data on doped ceria revealed that surface exchange could be dominated by grain boundary processes. A lower limit for the diffusion coefficient was determined as 10- 15 cm2 s- 1 at 575 °C.

Original languageEnglish
Pages (from-to)1205-1208
Number of pages4
JournalSolid State Ionics
Issue number21-26
Publication statusPublished - Sep 15 2008


  • Ceria
  • Nanocrystals
  • Oxygen surface exchange
  • SIMS
  • Thin film

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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