Fatigue effect on the I-V characteristics of sol-gel derived PZT thin films

S. C. Lee, G. Teowee, R. D. Schrimpf, Dunbar P Birnie, D. R. Uhlmann, K. F. Galloway

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The effect of fatigue on sol-gel-derived PZT (lead zirconate titanate) thin films were analyzed using the I-V measurement method. Under bipolar stress, polarization reduction was correlated with a decrease in the switching current and an increase in the leakage current. Neither a significant decrease in the polarization nor an increase in the leakage current was observed under unipolar stress. The fatigue effects are explained by an increase in the space-charge regions near the electrodes or oxygen-deficient dendrite growth. A static I-V measurement method for ferroelectric thin films was developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current were considered in this method.

Original languageEnglish
Title of host publicationISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics
EditorsAhmad Safari, Michael Liu, Angus Kingon, Gene Haertling
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages240-243
Number of pages4
ISBN (Electronic)0780304659, 9780780304659
DOIs
Publication statusPublished - Jan 1 1992
Event8th IEEE International Symposium on Applications of Ferroelectrics, ISAF 1992 - Greenville, United States
Duration: Aug 30 1992Sep 2 1992

Publication series

NameISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics

Conference

Conference8th IEEE International Symposium on Applications of Ferroelectrics, ISAF 1992
CountryUnited States
CityGreenville
Period8/30/929/2/92

Fingerprint

Leakage currents
Sol-gels
Fatigue of materials
Polarization
Thin films
Ferroelectric thin films
Electric space charge
Oxygen
Electrodes
lead titanate zirconate

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lee, S. C., Teowee, G., Schrimpf, R. D., Birnie, D. P., Uhlmann, D. R., & Galloway, K. F. (1992). Fatigue effect on the I-V characteristics of sol-gel derived PZT thin films. In A. Safari, M. Liu, A. Kingon, & G. Haertling (Eds.), ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics (pp. 240-243). [300674] (ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF.1992.300674

Fatigue effect on the I-V characteristics of sol-gel derived PZT thin films. / Lee, S. C.; Teowee, G.; Schrimpf, R. D.; Birnie, Dunbar P; Uhlmann, D. R.; Galloway, K. F.

ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics. ed. / Ahmad Safari; Michael Liu; Angus Kingon; Gene Haertling. Institute of Electrical and Electronics Engineers Inc., 1992. p. 240-243 300674 (ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, SC, Teowee, G, Schrimpf, RD, Birnie, DP, Uhlmann, DR & Galloway, KF 1992, Fatigue effect on the I-V characteristics of sol-gel derived PZT thin films. in A Safari, M Liu, A Kingon & G Haertling (eds), ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics., 300674, ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics, Institute of Electrical and Electronics Engineers Inc., pp. 240-243, 8th IEEE International Symposium on Applications of Ferroelectrics, ISAF 1992, Greenville, United States, 8/30/92. https://doi.org/10.1109/ISAF.1992.300674
Lee SC, Teowee G, Schrimpf RD, Birnie DP, Uhlmann DR, Galloway KF. Fatigue effect on the I-V characteristics of sol-gel derived PZT thin films. In Safari A, Liu M, Kingon A, Haertling G, editors, ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics. Institute of Electrical and Electronics Engineers Inc. 1992. p. 240-243. 300674. (ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.1992.300674
Lee, S. C. ; Teowee, G. ; Schrimpf, R. D. ; Birnie, Dunbar P ; Uhlmann, D. R. ; Galloway, K. F. / Fatigue effect on the I-V characteristics of sol-gel derived PZT thin films. ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics. editor / Ahmad Safari ; Michael Liu ; Angus Kingon ; Gene Haertling. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 240-243 (ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics).
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