Femtosecond 1P-to-1S electron relaxation in strongly confined semiconductor nanocrystals

Victor I Klimov, Duncan W. McBranch

Research output: Contribution to journalArticle

383 Citations (Scopus)

Abstract

High-sensitivity femtosecond transient absorption is applied to directly measure the population-depopulation dynamics of the lowest (1S) and the first excited (1P) electron states in CdSe nanocrystals (NC's) of different radii with 1S - 1P energy separation up to 16 longitudinal optical phonon energies. Instead of the drastic reduction of the energy relaxation rate expected due to a phonon bottleneck, we observe a fast subpicosecond 1P-to-1S relaxation, with the rate enhanced in NC's of smaller radius. This indicates the opening of new confinement-enhanced relaxation channels which likely involve Auger-type electron-hole energy transfer.

Original languageEnglish
Pages (from-to)4028-4031
Number of pages4
JournalPhysical Review Letters
Volume80
Issue number18
Publication statusPublished - 1998

Fingerprint

nanocrystals
electrons
radii
electron states
energy
energy transfer
sensitivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Femtosecond 1P-to-1S electron relaxation in strongly confined semiconductor nanocrystals. / Klimov, Victor I; McBranch, Duncan W.

In: Physical Review Letters, Vol. 80, No. 18, 1998, p. 4028-4031.

Research output: Contribution to journalArticle

@article{30baa7f7b75741c297f9908a53ab6eff,
title = "Femtosecond 1P-to-1S electron relaxation in strongly confined semiconductor nanocrystals",
abstract = "High-sensitivity femtosecond transient absorption is applied to directly measure the population-depopulation dynamics of the lowest (1S) and the first excited (1P) electron states in CdSe nanocrystals (NC's) of different radii with 1S - 1P energy separation up to 16 longitudinal optical phonon energies. Instead of the drastic reduction of the energy relaxation rate expected due to a phonon bottleneck, we observe a fast subpicosecond 1P-to-1S relaxation, with the rate enhanced in NC's of smaller radius. This indicates the opening of new confinement-enhanced relaxation channels which likely involve Auger-type electron-hole energy transfer.",
author = "Klimov, {Victor I} and McBranch, {Duncan W.}",
year = "1998",
language = "English",
volume = "80",
pages = "4028--4031",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "18",

}

TY - JOUR

T1 - Femtosecond 1P-to-1S electron relaxation in strongly confined semiconductor nanocrystals

AU - Klimov, Victor I

AU - McBranch, Duncan W.

PY - 1998

Y1 - 1998

N2 - High-sensitivity femtosecond transient absorption is applied to directly measure the population-depopulation dynamics of the lowest (1S) and the first excited (1P) electron states in CdSe nanocrystals (NC's) of different radii with 1S - 1P energy separation up to 16 longitudinal optical phonon energies. Instead of the drastic reduction of the energy relaxation rate expected due to a phonon bottleneck, we observe a fast subpicosecond 1P-to-1S relaxation, with the rate enhanced in NC's of smaller radius. This indicates the opening of new confinement-enhanced relaxation channels which likely involve Auger-type electron-hole energy transfer.

AB - High-sensitivity femtosecond transient absorption is applied to directly measure the population-depopulation dynamics of the lowest (1S) and the first excited (1P) electron states in CdSe nanocrystals (NC's) of different radii with 1S - 1P energy separation up to 16 longitudinal optical phonon energies. Instead of the drastic reduction of the energy relaxation rate expected due to a phonon bottleneck, we observe a fast subpicosecond 1P-to-1S relaxation, with the rate enhanced in NC's of smaller radius. This indicates the opening of new confinement-enhanced relaxation channels which likely involve Auger-type electron-hole energy transfer.

UR - http://www.scopus.com/inward/record.url?scp=0032482008&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032482008&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032482008

VL - 80

SP - 4028

EP - 4031

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 18

ER -