Femtosecond interactions in semiconductor quantum dots

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Carrier relaxation in strongly-confined quantum dots of semiconducting cadmium compound was investigated using femtosecond photoluminescence (PL) and transient absorption (TA) spectroscopies. The role of electron hole interactions in energy relaxation was evaluated by controlling electron hole coupling using different type of ligands. More than 10-fold increase in the electron relaxation time was observed after the completion of the hole transfer to the capping molecule. A reduction in the hole energy-loss rate in the final stages of hole relaxation at the bottom of the valence band was also observed due to a large energy gap separating the lowest emitting hole states from a dense quasi-continuum of higher lying states.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages786-787
Number of pages2
Volume2
Publication statusPublished - 2001
Event14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States
Duration: Nov 11 2001Nov 15 2001

Other

Other14th Annual Meeting of the IEEE Lasers and Electro-Optics Society
CountryUnited States
CitySan Diego, CA
Period11/11/0111/15/01

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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  • Cite this

    Klimov, V. I. (2001). Femtosecond interactions in semiconductor quantum dots. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 2, pp. 786-787)