Abstract
Carrier relaxation in strongly-confined quantum dots of semiconducting cadmium compound was investigated using femtosecond photoluminescence (PL) and transient absorption (TA) spectroscopies. The role of electron hole interactions in energy relaxation was evaluated by controlling electron hole coupling using different type of ligands. More than 10-fold increase in the electron relaxation time was observed after the completion of the hole transfer to the capping molecule. A reduction in the hole energy-loss rate in the final stages of hole relaxation at the bottom of the valence band was also observed due to a large energy gap separating the lowest emitting hole states from a dense quasi-continuum of higher lying states.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Pages | 786-787 |
| Number of pages | 2 |
| Volume | 2 |
| Publication status | Published - 2001 |
| Event | 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States Duration: Nov 11 2001 → Nov 15 2001 |
Other
| Other | 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society |
|---|---|
| Country | United States |
| City | San Diego, CA |
| Period | 11/11/01 → 11/15/01 |
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ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering
Cite this
Klimov, V. I. (2001). Femtosecond interactions in semiconductor quantum dots. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 2, pp. 786-787)