Femtosecond interactions in semiconductor quantum dots

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Carrier relaxation in strongly-confined quantum dots of semiconducting cadmium compound was investigated using femtosecond photoluminescence (PL) and transient absorption (TA) spectroscopies. The role of electron hole interactions in energy relaxation was evaluated by controlling electron hole coupling using different type of ligands. More than 10-fold increase in the electron relaxation time was observed after the completion of the hole transfer to the capping molecule. A reduction in the hole energy-loss rate in the final stages of hole relaxation at the bottom of the valence band was also observed due to a large energy gap separating the lowest emitting hole states from a dense quasi-continuum of higher lying states.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages786-787
Number of pages2
Volume2
Publication statusPublished - 2001
Event14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States
Duration: Nov 11 2001Nov 15 2001

Other

Other14th Annual Meeting of the IEEE Lasers and Electro-Optics Society
CountryUnited States
CitySan Diego, CA
Period11/11/0111/15/01

Fingerprint

Semiconductor quantum dots
Semiconducting cadmium compounds
Electrons
Valence bands
Absorption spectroscopy
Relaxation time
Energy dissipation
Photoluminescence
Energy gap
Ligands
Molecules

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Klimov, V. I. (2001). Femtosecond interactions in semiconductor quantum dots. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 2, pp. 786-787)

Femtosecond interactions in semiconductor quantum dots. / Klimov, Victor I.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2 2001. p. 786-787.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Klimov, VI 2001, Femtosecond interactions in semiconductor quantum dots. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 2, pp. 786-787, 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society, San Diego, CA, United States, 11/11/01.
Klimov VI. Femtosecond interactions in semiconductor quantum dots. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2. 2001. p. 786-787
Klimov, Victor I. / Femtosecond interactions in semiconductor quantum dots. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 2 2001. pp. 786-787
@inproceedings{0c5f06dddb0b4194838a07ed9ce21b56,
title = "Femtosecond interactions in semiconductor quantum dots",
abstract = "Carrier relaxation in strongly-confined quantum dots of semiconducting cadmium compound was investigated using femtosecond photoluminescence (PL) and transient absorption (TA) spectroscopies. The role of electron hole interactions in energy relaxation was evaluated by controlling electron hole coupling using different type of ligands. More than 10-fold increase in the electron relaxation time was observed after the completion of the hole transfer to the capping molecule. A reduction in the hole energy-loss rate in the final stages of hole relaxation at the bottom of the valence band was also observed due to a large energy gap separating the lowest emitting hole states from a dense quasi-continuum of higher lying states.",
author = "Klimov, {Victor I}",
year = "2001",
language = "English",
volume = "2",
pages = "786--787",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

}

TY - GEN

T1 - Femtosecond interactions in semiconductor quantum dots

AU - Klimov, Victor I

PY - 2001

Y1 - 2001

N2 - Carrier relaxation in strongly-confined quantum dots of semiconducting cadmium compound was investigated using femtosecond photoluminescence (PL) and transient absorption (TA) spectroscopies. The role of electron hole interactions in energy relaxation was evaluated by controlling electron hole coupling using different type of ligands. More than 10-fold increase in the electron relaxation time was observed after the completion of the hole transfer to the capping molecule. A reduction in the hole energy-loss rate in the final stages of hole relaxation at the bottom of the valence band was also observed due to a large energy gap separating the lowest emitting hole states from a dense quasi-continuum of higher lying states.

AB - Carrier relaxation in strongly-confined quantum dots of semiconducting cadmium compound was investigated using femtosecond photoluminescence (PL) and transient absorption (TA) spectroscopies. The role of electron hole interactions in energy relaxation was evaluated by controlling electron hole coupling using different type of ligands. More than 10-fold increase in the electron relaxation time was observed after the completion of the hole transfer to the capping molecule. A reduction in the hole energy-loss rate in the final stages of hole relaxation at the bottom of the valence band was also observed due to a large energy gap separating the lowest emitting hole states from a dense quasi-continuum of higher lying states.

UR - http://www.scopus.com/inward/record.url?scp=0035657340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035657340&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0035657340

VL - 2

SP - 786

EP - 787

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -