Abstract
Large photo-induced absorption signals were observed in free standing porous silicon films in the spectral range from 1.1 to 2.5 eV using a femtosecond pump and probe technique. The measured nonlinear signal has a very fast component with relaxation constants from 800 fs to tens of picoseconds superimposed on the slow-relaxing thermal background. The spectral structure and relaxation dynamics of the short-lived component of transient absorption show the presence of molecular-like Si complexes with well defined energy levels and spectrally uniform picosecond relaxation dynamics.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 179-184 |
| Number of pages | 6 |
| Volume | 405 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995 |
Other
| Other | Proceedings of the 1995 MRS Fall Meeting |
|---|---|
| City | Boston, MA, USA |
| Period | 11/26/95 → 12/1/95 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
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Klimov, V. I., McBranch, D., & Karavanskii, V. (1996). Femtosecond nonlinear transmission study of free-standing porous silicon films. In Materials Research Society Symposium - Proceedings (Vol. 405, pp. 179-184). Materials Research Society.