Abstract
Large photo-induced absorption signals were observed in free standing porous silicon films in the spectral range from 1.1 to 2.5 eV using a femtosecond pump and probe technique. The measured nonlinear signal has a very fast component with relaxation constants from 800 fs to tens of picoseconds superimposed on the slow-relaxing thermal background. The spectral structure and relaxation dynamics of the short-lived component of transient absorption show the presence of molecular-like Si complexes with well defined energy levels and spectrally uniform picosecond relaxation dynamics.
Original language | English |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 179-184 |
Number of pages | 6 |
Volume | 405 |
Publication status | Published - 1996 |
Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995 |
Other
Other | Proceedings of the 1995 MRS Fall Meeting |
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City | Boston, MA, USA |
Period | 11/26/95 → 12/1/95 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials