Femtosecond study of carrier cooling and exciton formation in the layered III-VI semiconductor GaSe

S. Nüsse; P. Haring Bolivar; H. Kurz; Victor I Klimov; F. Lévy

Femtosecond study of carrier cooling and exciton formation in the layered III-VI semiconductor GaSe

S. Nüsse, P. Haring Bolivar, H. Kurz, Victor I Klimov, F. Lévy

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We give a comprehensive study of carrier cooling and exciton formation in GaSe using femtosecond time-resolved photoluminescence. The initial subpicosecond cooling of hot carriers is due to the Fröhlich interaction with longitudinal optical E′ phonons and is followed by a slower cooling process dominated by the deformation potential interaction with nonpolar optical A′₁ phonons. The subsequent formation of excitons and their spectral relaxation is studied at different carrier densities, detection energies and lattice temperatures.

Original language	English
Pages (from-to)	98-101
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	204
Issue number	1
Publication status	Published - Nov 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "We give a comprehensive study of carrier cooling and exciton formation in GaSe using femtosecond time-resolved photoluminescence. The initial subpicosecond cooling of hot carriers is due to the Fr{\"o}hlich interaction with longitudinal optical E′ phonons and is followed by a slower cooling process dominated by the deformation potential interaction with nonpolar optical A′1 phonons. The subsequent formation of excitons and their spectral relaxation is studied at different carrier densities, detection energies and lattice temperatures.",

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AU - Nüsse, S.

AU - Haring Bolivar, P.

AU - Kurz, H.

AU - Klimov, Victor I

AU - Lévy, F.

PY - 1997/11

Y1 - 1997/11

N2 - We give a comprehensive study of carrier cooling and exciton formation in GaSe using femtosecond time-resolved photoluminescence. The initial subpicosecond cooling of hot carriers is due to the Fröhlich interaction with longitudinal optical E′ phonons and is followed by a slower cooling process dominated by the deformation potential interaction with nonpolar optical A′1 phonons. The subsequent formation of excitons and their spectral relaxation is studied at different carrier densities, detection energies and lattice temperatures.

AB - We give a comprehensive study of carrier cooling and exciton formation in GaSe using femtosecond time-resolved photoluminescence. The initial subpicosecond cooling of hot carriers is due to the Fröhlich interaction with longitudinal optical E′ phonons and is followed by a slower cooling process dominated by the deformation potential interaction with nonpolar optical A′1 phonons. The subsequent formation of excitons and their spectral relaxation is studied at different carrier densities, detection energies and lattice temperatures.

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