Femtosecond study of carrier cooling and exciton formation in the layered III-VI semiconductor GaSe

S. Nüsse, P. Haring Bolivar, H. Kurz, Victor I Klimov, F. Lévy

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We give a comprehensive study of carrier cooling and exciton formation in GaSe using femtosecond time-resolved photoluminescence. The initial subpicosecond cooling of hot carriers is due to the Fröhlich interaction with longitudinal optical E′ phonons and is followed by a slower cooling process dominated by the deformation potential interaction with nonpolar optical A′1 phonons. The subsequent formation of excitons and their spectral relaxation is studied at different carrier densities, detection energies and lattice temperatures.

Original languageEnglish
Pages (from-to)98-101
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume204
Issue number1
Publication statusPublished - Nov 1997

Fingerprint

Excitons
excitons
Semiconductor materials
Phonons
Cooling
cooling
phonons
Hot carriers
Carrier concentration
Photoluminescence
interactions
photoluminescence
LDS 751
gallium selenide
Temperature
temperature
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Femtosecond study of carrier cooling and exciton formation in the layered III-VI semiconductor GaSe. / Nüsse, S.; Haring Bolivar, P.; Kurz, H.; Klimov, Victor I; Lévy, F.

In: Physica Status Solidi (B) Basic Research, Vol. 204, No. 1, 11.1997, p. 98-101.

Research output: Contribution to journalArticle

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