Ferromagnetic properties of MnAs/Ge multilayers grown by molecular beam epitaxy

Jaejin Lee, Yongjie Cui, Jonghyun Song, Yunki Kim, A. J. Freeman, J. B. Ketterson, Sunglae Cho

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Abstract

The ferromagnetic properties of MnAs/Ge multilayer structures were investigated using molecular beam epitaxy. The MnAs/Ge multilayer structures were grown on semi-insulating (001) GaAs substrates at growth temperature of 580°C. The multilayer thickness of 100Å exhibited ferromagnetism upto 345 K with coercive field of 147 Oe at 300 K. The results show that formation of ferromagnetic multilayers may be applied to material design for spintronic applications.

Original languageEnglish
Pages (from-to)6562-6564
Number of pages3
JournalJournal of Applied Physics
Volume95
Issue number11 II
DOIs
Publication statusPublished - Jun 1 2004

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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