Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers

J. J. Lee, Y. Cui, J. H. Song, Arthur J Freeman, J. B. Ketterson, S. L. Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ge/MnAs multilayers are grown on (001) GaAs substrates by molecular-beam epitaxy. All samples investigated showed strong anomalous Hall effects at room temperature with p-type conductivity and temperature-dependent hysteresis loops in the magnetization. Ge/MnAs multilayers also revealed an in-plane magnetic easy axis and a vanishingly small in-plane magnetic anisotropy. These results are in sharp contrast to MnAs/GaAs digital alloys, where the reported Curie temperatures are at or below 50 K, and demonstrate the potential of germanium-based spintronic devices.

Original languageEnglish
Pages (from-to)3169-3171
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number15
DOIs
Publication statusPublished - Oct 11 2004

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ferromagnetism
Hall effect
Curie temperature
charge carriers
germanium
molecular beam epitaxy
hysteresis
conductivity
magnetization
anisotropy
room temperature
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers. / Lee, J. J.; Cui, Y.; Song, J. H.; Freeman, Arthur J; Ketterson, J. B.; Cho, S. L.

In: Applied Physics Letters, Vol. 85, No. 15, 11.10.2004, p. 3169-3171.

Research output: Contribution to journalArticle

Lee, J. J. ; Cui, Y. ; Song, J. H. ; Freeman, Arthur J ; Ketterson, J. B. ; Cho, S. L. / Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers. In: Applied Physics Letters. 2004 ; Vol. 85, No. 15. pp. 3169-3171.
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