Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers

J. J. Lee, Y. Cui, J. H. Song, A. J. Freeman, J. B. Ketterson, S. L. Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ge/MnAs multilayers are grown on (001) GaAs substrates by molecular-beam epitaxy. All samples investigated showed strong anomalous Hall effects at room temperature with p-type conductivity and temperature-dependent hysteresis loops in the magnetization. Ge/MnAs multilayers also revealed an in-plane magnetic easy axis and a vanishingly small in-plane magnetic anisotropy. These results are in sharp contrast to MnAs/GaAs digital alloys, where the reported Curie temperatures are at or below 50 K, and demonstrate the potential of germanium-based spintronic devices.

Original languageEnglish
Pages (from-to)3169-3171
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number15
DOIs
Publication statusPublished - Oct 11 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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