Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma

M. Q. Ding, D. M. Gruen, A. R. Krauss, Orlando Auciello, T. D. Corrigan, Robert P. H. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The field emission properties from diamond films grown under substrate bias conditions in a microwave plasma CVD system were investigated, with a substrate temperature of 800 °C, microwave power of 600 W and a total pressure of 11 Torr. One group of films was grown with a substrate bias at -100 V in a gas mixture of 1% N2, 1% to 20% CH4 in H2, while a second group of films was grown with a substrate bias ranging from 100 V to -150 V in a gas mixture of 1% N2-10% CH4-89% H2. Field emission performance in terms of turn-on field and emission current improved considerably as CH4 concentration and negative bias voltage increase.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
PublisherIEEE
Pages277
Number of pages1
Publication statusPublished - 1998
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: Jul 19 1998Jul 24 1998

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period7/19/987/24/98

Fingerprint

field emission
diamonds
thin films
gas mixtures
microwaves
diamond films
vapor deposition
electric potential
temperature

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Ding, M. Q., Gruen, D. M., Krauss, A. R., Auciello, O., Corrigan, T. D., & Chang, R. P. H. (1998). Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 277). IEEE.

Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma. / Ding, M. Q.; Gruen, D. M.; Krauss, A. R.; Auciello, Orlando; Corrigan, T. D.; Chang, Robert P. H.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, 1998. p. 277.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ding, MQ, Gruen, DM, Krauss, AR, Auciello, O, Corrigan, TD & Chang, RPH 1998, Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, pp. 277, Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 7/19/98.
Ding MQ, Gruen DM, Krauss AR, Auciello O, Corrigan TD, Chang RPH. Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE. 1998. p. 277
Ding, M. Q. ; Gruen, D. M. ; Krauss, A. R. ; Auciello, Orlando ; Corrigan, T. D. ; Chang, Robert P. H. / Field emission from bias grown diamond thin films in a CH4/N2/H2 plasma. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, 1998. pp. 277
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abstract = "The field emission properties from diamond films grown under substrate bias conditions in a microwave plasma CVD system were investigated, with a substrate temperature of 800 °C, microwave power of 600 W and a total pressure of 11 Torr. One group of films was grown with a substrate bias at -100 V in a gas mixture of 1{\%} N2, 1{\%} to 20{\%} CH4 in H2, while a second group of films was grown with a substrate bias ranging from 100 V to -150 V in a gas mixture of 1{\%} N2-10{\%} CH4-89{\%} H2. Field emission performance in terms of turn-on field and emission current improved considerably as CH4 concentration and negative bias voltage increase.",
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