Film microstructure-deposition condition relationships in the growth of epitaxial NiO films by metalorganic chemical vapor deposition on oxide and metal substrates

Anchuan Wang, John A. Belot, Tobin J Marks

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Abstract

High-quality epitaxial or highly textured NiO thin films can be grown at temperatures of 400-750 °C by low-pressure metalorganic chemical vapor deposition (MOCVD) on MgO, SrTiO3, C-cut sapphire, as well as on single crystal and highly textured Ni (200) metal substrates using Ni(dpm)2 (dpm = dipivaloylmethanate) as the volatile precursor and O2 or H2O as the oxidizer/protonolyzer. X-ray diffraction (XRD), scanning electron microscopy/energy dispersive detection (SEM/EDX), and atomic force microscopy (AFM) confirm that the O2-derived NiO films are smooth and that the quality of the epitaxy can be improved by decreasing the growth temperature and/or the precursor flow rate. However, low growth temperatures (400-500 °C) lead to rougher surfaces and carbon contamination. The H2O-derived NiO films, which can be obtained only at relatively high temperatures (650-750 °C), exhibit slightly broader ω scan full width half-maximum (FWHM) values and rougher surfaces but no carbon contamination. Using H2O as the oxidizer/protonolyzer, smooth and highly textured NiO (111) films can be grown on easily oxidized single crystal and highly textured Ni (200) metal substrates, which is impossible when O2 is the oxidizer. The textural quality of these films depends on both the quality of the metal substrates and the gaseous precursor flow rate.

Original languageEnglish
Pages (from-to)1132-1136
Number of pages5
JournalJournal of Materials Research
Volume14
Issue number3
Publication statusPublished - Mar 1999

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Epitaxial films
Metallorganic chemical vapor deposition
Oxides
metalorganic chemical vapor deposition
oxidizers
Metals
microstructure
Microstructure
oxides
Growth temperature
Substrates
metals
contamination
Contamination
Carbon
flow velocity
Flow rate
Single crystals
Low pressure chemical vapor deposition
Scanning electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

@article{cceb2437c9ed4289bbeefb35e939ce60,
title = "Film microstructure-deposition condition relationships in the growth of epitaxial NiO films by metalorganic chemical vapor deposition on oxide and metal substrates",
abstract = "High-quality epitaxial or highly textured NiO thin films can be grown at temperatures of 400-750 °C by low-pressure metalorganic chemical vapor deposition (MOCVD) on MgO, SrTiO3, C-cut sapphire, as well as on single crystal and highly textured Ni (200) metal substrates using Ni(dpm)2 (dpm = dipivaloylmethanate) as the volatile precursor and O2 or H2O as the oxidizer/protonolyzer. X-ray diffraction (XRD), scanning electron microscopy/energy dispersive detection (SEM/EDX), and atomic force microscopy (AFM) confirm that the O2-derived NiO films are smooth and that the quality of the epitaxy can be improved by decreasing the growth temperature and/or the precursor flow rate. However, low growth temperatures (400-500 °C) lead to rougher surfaces and carbon contamination. The H2O-derived NiO films, which can be obtained only at relatively high temperatures (650-750 °C), exhibit slightly broader ω scan full width half-maximum (FWHM) values and rougher surfaces but no carbon contamination. Using H2O as the oxidizer/protonolyzer, smooth and highly textured NiO (111) films can be grown on easily oxidized single crystal and highly textured Ni (200) metal substrates, which is impossible when O2 is the oxidizer. The textural quality of these films depends on both the quality of the metal substrates and the gaseous precursor flow rate.",
author = "Anchuan Wang and Belot, {John A.} and Marks, {Tobin J}",
year = "1999",
month = "3",
language = "English",
volume = "14",
pages = "1132--1136",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "3",

}

TY - JOUR

T1 - Film microstructure-deposition condition relationships in the growth of epitaxial NiO films by metalorganic chemical vapor deposition on oxide and metal substrates

AU - Wang, Anchuan

AU - Belot, John A.

AU - Marks, Tobin J

PY - 1999/3

Y1 - 1999/3

N2 - High-quality epitaxial or highly textured NiO thin films can be grown at temperatures of 400-750 °C by low-pressure metalorganic chemical vapor deposition (MOCVD) on MgO, SrTiO3, C-cut sapphire, as well as on single crystal and highly textured Ni (200) metal substrates using Ni(dpm)2 (dpm = dipivaloylmethanate) as the volatile precursor and O2 or H2O as the oxidizer/protonolyzer. X-ray diffraction (XRD), scanning electron microscopy/energy dispersive detection (SEM/EDX), and atomic force microscopy (AFM) confirm that the O2-derived NiO films are smooth and that the quality of the epitaxy can be improved by decreasing the growth temperature and/or the precursor flow rate. However, low growth temperatures (400-500 °C) lead to rougher surfaces and carbon contamination. The H2O-derived NiO films, which can be obtained only at relatively high temperatures (650-750 °C), exhibit slightly broader ω scan full width half-maximum (FWHM) values and rougher surfaces but no carbon contamination. Using H2O as the oxidizer/protonolyzer, smooth and highly textured NiO (111) films can be grown on easily oxidized single crystal and highly textured Ni (200) metal substrates, which is impossible when O2 is the oxidizer. The textural quality of these films depends on both the quality of the metal substrates and the gaseous precursor flow rate.

AB - High-quality epitaxial or highly textured NiO thin films can be grown at temperatures of 400-750 °C by low-pressure metalorganic chemical vapor deposition (MOCVD) on MgO, SrTiO3, C-cut sapphire, as well as on single crystal and highly textured Ni (200) metal substrates using Ni(dpm)2 (dpm = dipivaloylmethanate) as the volatile precursor and O2 or H2O as the oxidizer/protonolyzer. X-ray diffraction (XRD), scanning electron microscopy/energy dispersive detection (SEM/EDX), and atomic force microscopy (AFM) confirm that the O2-derived NiO films are smooth and that the quality of the epitaxy can be improved by decreasing the growth temperature and/or the precursor flow rate. However, low growth temperatures (400-500 °C) lead to rougher surfaces and carbon contamination. The H2O-derived NiO films, which can be obtained only at relatively high temperatures (650-750 °C), exhibit slightly broader ω scan full width half-maximum (FWHM) values and rougher surfaces but no carbon contamination. Using H2O as the oxidizer/protonolyzer, smooth and highly textured NiO (111) films can be grown on easily oxidized single crystal and highly textured Ni (200) metal substrates, which is impossible when O2 is the oxidizer. The textural quality of these films depends on both the quality of the metal substrates and the gaseous precursor flow rate.

UR - http://www.scopus.com/inward/record.url?scp=0033099569&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033099569&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033099569

VL - 14

SP - 1132

EP - 1136

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 3

ER -