First-principles calculations for understanding high conductivity and optical transparency in InxCd1-xO films

R. Asahi, A. Wang, J. R. Babcock, N. L. Edleman, A. W. Metz, M. A. Lane, V. P. Dravid, C. R. Kannewurf, Arthur J Freeman, Tobin J Marks

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

We investigate InxCd1-xO materials, where x = 0.0, 0.031, 0.063 and 0.125, to understand their high electrical conductivity and optical transparency windows, using the full-potential linearized augmented plane wave (FLAPW) method. In addition, we employ the screened exchange LDA (sX-LDA) method to evaluate accurate band structures including band gap that is underestimated by the LDA calculations. The results show a dramatic Burstein-Moss shift of the absorption edge by the In doping, reflecting the small effective mass of the Cd 5s conduction band. The calculated direct band gaps, 2.36 eV for x = 0.0 and 3.17 eV for x = 0.063, show excellent agreement with experiment. The effective mass of the conduction band of CdO is calculated to be 0.24 me (in the △ direction), in good agreement with an experimental value of 0.27 me, explaining its high electrical conductivity. The hybridization between the Cd 5s and the In 5s states yields complex many-body effects in the conduction bands: a hybridization gap in the conduction bands and a band-gap narrowing which cancels the further Burstein-Moss shift for higher In doping.

Original languageEnglish
Pages (from-to)101-105
Number of pages5
JournalThin Solid Films
Volume411
Issue number1
DOIs
Publication statusPublished - May 22 2002

Fingerprint

Conduction bands
Transparency
conduction bands
Bryophytes
conductivity
Energy gap
Doping (additives)
electrical resistivity
shift
Band structure
plane waves
Experiments
Electric Conductivity

Keywords

  • Band structure
  • Optical properties

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

First-principles calculations for understanding high conductivity and optical transparency in InxCd1-xO films. / Asahi, R.; Wang, A.; Babcock, J. R.; Edleman, N. L.; Metz, A. W.; Lane, M. A.; Dravid, V. P.; Kannewurf, C. R.; Freeman, Arthur J; Marks, Tobin J.

In: Thin Solid Films, Vol. 411, No. 1, 22.05.2002, p. 101-105.

Research output: Contribution to journalArticle

Asahi, R, Wang, A, Babcock, JR, Edleman, NL, Metz, AW, Lane, MA, Dravid, VP, Kannewurf, CR, Freeman, AJ & Marks, TJ 2002, 'First-principles calculations for understanding high conductivity and optical transparency in InxCd1-xO films', Thin Solid Films, vol. 411, no. 1, pp. 101-105. https://doi.org/10.1016/S0040-6090(02)00196-7
Asahi, R. ; Wang, A. ; Babcock, J. R. ; Edleman, N. L. ; Metz, A. W. ; Lane, M. A. ; Dravid, V. P. ; Kannewurf, C. R. ; Freeman, Arthur J ; Marks, Tobin J. / First-principles calculations for understanding high conductivity and optical transparency in InxCd1-xO films. In: Thin Solid Films. 2002 ; Vol. 411, No. 1. pp. 101-105.
@article{e69cf249398c4c31971b94cd961fc483,
title = "First-principles calculations for understanding high conductivity and optical transparency in InxCd1-xO films",
abstract = "We investigate InxCd1-xO materials, where x = 0.0, 0.031, 0.063 and 0.125, to understand their high electrical conductivity and optical transparency windows, using the full-potential linearized augmented plane wave (FLAPW) method. In addition, we employ the screened exchange LDA (sX-LDA) method to evaluate accurate band structures including band gap that is underestimated by the LDA calculations. The results show a dramatic Burstein-Moss shift of the absorption edge by the In doping, reflecting the small effective mass of the Cd 5s conduction band. The calculated direct band gaps, 2.36 eV for x = 0.0 and 3.17 eV for x = 0.063, show excellent agreement with experiment. The effective mass of the conduction band of CdO is calculated to be 0.24 me (in the △ direction), in good agreement with an experimental value of 0.27 me, explaining its high electrical conductivity. The hybridization between the Cd 5s and the In 5s states yields complex many-body effects in the conduction bands: a hybridization gap in the conduction bands and a band-gap narrowing which cancels the further Burstein-Moss shift for higher In doping.",
keywords = "Band structure, Optical properties",
author = "R. Asahi and A. Wang and Babcock, {J. R.} and Edleman, {N. L.} and Metz, {A. W.} and Lane, {M. A.} and Dravid, {V. P.} and Kannewurf, {C. R.} and Freeman, {Arthur J} and Marks, {Tobin J}",
year = "2002",
month = "5",
day = "22",
doi = "10.1016/S0040-6090(02)00196-7",
language = "English",
volume = "411",
pages = "101--105",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - First-principles calculations for understanding high conductivity and optical transparency in InxCd1-xO films

AU - Asahi, R.

AU - Wang, A.

AU - Babcock, J. R.

AU - Edleman, N. L.

AU - Metz, A. W.

AU - Lane, M. A.

AU - Dravid, V. P.

AU - Kannewurf, C. R.

AU - Freeman, Arthur J

AU - Marks, Tobin J

PY - 2002/5/22

Y1 - 2002/5/22

N2 - We investigate InxCd1-xO materials, where x = 0.0, 0.031, 0.063 and 0.125, to understand their high electrical conductivity and optical transparency windows, using the full-potential linearized augmented plane wave (FLAPW) method. In addition, we employ the screened exchange LDA (sX-LDA) method to evaluate accurate band structures including band gap that is underestimated by the LDA calculations. The results show a dramatic Burstein-Moss shift of the absorption edge by the In doping, reflecting the small effective mass of the Cd 5s conduction band. The calculated direct band gaps, 2.36 eV for x = 0.0 and 3.17 eV for x = 0.063, show excellent agreement with experiment. The effective mass of the conduction band of CdO is calculated to be 0.24 me (in the △ direction), in good agreement with an experimental value of 0.27 me, explaining its high electrical conductivity. The hybridization between the Cd 5s and the In 5s states yields complex many-body effects in the conduction bands: a hybridization gap in the conduction bands and a band-gap narrowing which cancels the further Burstein-Moss shift for higher In doping.

AB - We investigate InxCd1-xO materials, where x = 0.0, 0.031, 0.063 and 0.125, to understand their high electrical conductivity and optical transparency windows, using the full-potential linearized augmented plane wave (FLAPW) method. In addition, we employ the screened exchange LDA (sX-LDA) method to evaluate accurate band structures including band gap that is underestimated by the LDA calculations. The results show a dramatic Burstein-Moss shift of the absorption edge by the In doping, reflecting the small effective mass of the Cd 5s conduction band. The calculated direct band gaps, 2.36 eV for x = 0.0 and 3.17 eV for x = 0.063, show excellent agreement with experiment. The effective mass of the conduction band of CdO is calculated to be 0.24 me (in the △ direction), in good agreement with an experimental value of 0.27 me, explaining its high electrical conductivity. The hybridization between the Cd 5s and the In 5s states yields complex many-body effects in the conduction bands: a hybridization gap in the conduction bands and a band-gap narrowing which cancels the further Burstein-Moss shift for higher In doping.

KW - Band structure

KW - Optical properties

UR - http://www.scopus.com/inward/record.url?scp=0037157409&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037157409&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00196-7

DO - 10.1016/S0040-6090(02)00196-7

M3 - Article

VL - 411

SP - 101

EP - 105

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -