First-principles determination of the electronic structures and optical properties of one-nanometer (001) and (111) Si nanowires

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Abstract

Results of precise theoretical full potential linear augmented plane wave determinations of the electronic structures and optical properties of one nm Si nanowires (SiNW) with (001) and (111) orientations are presented. The electronic states at the gaps demonstrate a strong orientation dependent parabolic character in the Brillouin zone and a clear entanglement in real space between different dimensions of the wire. The localization and local symmetry imposed in the states by quantum confinement quenches the transitions around the gap of the SiNW, yielding an optically inactive direct gap. The observed photoluminescence in the (001) wire is attributed to a transition rooted in an Si8 ring. The optical structure in the experimental range is well reproduced by the first-principles calculation that includes the screened exchange-local density approximation correction to the well-known failure of the local density approximation.

Original languageEnglish
Article number075333
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number7
DOIs
Publication statusPublished - 2006

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Local density approximation
Nanowires
Electronic structure
nanowires
Optical properties
Wire
electronic structure
optical properties
Quantum confinement
Electronic states
wire
Photoluminescence
approximation
Brillouin zones
plane waves
photoluminescence
rings
symmetry
electronics

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

@article{561621dba19f460fbe63981c12efeea2,
title = "First-principles determination of the electronic structures and optical properties of one-nanometer (001) and (111) Si nanowires",
abstract = "Results of precise theoretical full potential linear augmented plane wave determinations of the electronic structures and optical properties of one nm Si nanowires (SiNW) with (001) and (111) orientations are presented. The electronic states at the gaps demonstrate a strong orientation dependent parabolic character in the Brillouin zone and a clear entanglement in real space between different dimensions of the wire. The localization and local symmetry imposed in the states by quantum confinement quenches the transitions around the gap of the SiNW, yielding an optically inactive direct gap. The observed photoluminescence in the (001) wire is attributed to a transition rooted in an Si8 ring. The optical structure in the experimental range is well reproduced by the first-principles calculation that includes the screened exchange-local density approximation correction to the well-known failure of the local density approximation.",
author = "Jun Li and Freeman, {Arthur J}",
year = "2006",
doi = "10.1103/PhysRevB.74.075333",
language = "English",
volume = "74",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "7",

}

TY - JOUR

T1 - First-principles determination of the electronic structures and optical properties of one-nanometer (001) and (111) Si nanowires

AU - Li, Jun

AU - Freeman, Arthur J

PY - 2006

Y1 - 2006

N2 - Results of precise theoretical full potential linear augmented plane wave determinations of the electronic structures and optical properties of one nm Si nanowires (SiNW) with (001) and (111) orientations are presented. The electronic states at the gaps demonstrate a strong orientation dependent parabolic character in the Brillouin zone and a clear entanglement in real space between different dimensions of the wire. The localization and local symmetry imposed in the states by quantum confinement quenches the transitions around the gap of the SiNW, yielding an optically inactive direct gap. The observed photoluminescence in the (001) wire is attributed to a transition rooted in an Si8 ring. The optical structure in the experimental range is well reproduced by the first-principles calculation that includes the screened exchange-local density approximation correction to the well-known failure of the local density approximation.

AB - Results of precise theoretical full potential linear augmented plane wave determinations of the electronic structures and optical properties of one nm Si nanowires (SiNW) with (001) and (111) orientations are presented. The electronic states at the gaps demonstrate a strong orientation dependent parabolic character in the Brillouin zone and a clear entanglement in real space between different dimensions of the wire. The localization and local symmetry imposed in the states by quantum confinement quenches the transitions around the gap of the SiNW, yielding an optically inactive direct gap. The observed photoluminescence in the (001) wire is attributed to a transition rooted in an Si8 ring. The optical structure in the experimental range is well reproduced by the first-principles calculation that includes the screened exchange-local density approximation correction to the well-known failure of the local density approximation.

UR - http://www.scopus.com/inward/record.url?scp=33748160175&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748160175&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.74.075333

DO - 10.1103/PhysRevB.74.075333

M3 - Article

VL - 74

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 7

M1 - 075333

ER -