First principles study of electronic and magnetic properties of Co 2MnGe/GaAs interfaces

S. Picozzi, A. Continenza, Arthur J Freeman

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Ab initio calculations within density functional theory have been performed for the Co2MnGe/GaAs junctions, focusing on the effect of the interface geometry on the relevant electronic and magnetic properties. Our calculations show that half-metallicity, present in bulk Co2MnGe, is lost when the Heusler compound is deposited on the semiconducting substrate, emphasizing the importance of interface effects in the design and efficiency of spin-injection processes. Our calculated local magnetic moments on the interface atoms show that the magnetic properties are not strongly affected by the presence of the interface, except for the Co-terminated case, where the Co atoms on the bridge site show a tendency towards magnetism quenching, similar to the Fe/GaAs junction.

Original languageEnglish
Pages (from-to)1697-1701
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume64
Issue number9-10
DOIs
Publication statusPublished - Sep 2003

Fingerprint

Electronic properties
Magnetic properties
magnetic properties
Atoms
Magnetism
Magnetic moments
electronics
Density functional theory
Quenching
Geometry
Substrates
metallicity
atoms
tendencies
magnetic moments
quenching
injection
density functional theory
gallium arsenide
geometry

Keywords

  • A. Semiconductors
  • C. Ab initio calculations
  • D. Magnetic properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

First principles study of electronic and magnetic properties of Co 2MnGe/GaAs interfaces. / Picozzi, S.; Continenza, A.; Freeman, Arthur J.

In: Journal of Physics and Chemistry of Solids, Vol. 64, No. 9-10, 09.2003, p. 1697-1701.

Research output: Contribution to journalArticle

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