Abstract
Ab initio calculations within density functional theory have been performed for the Co2MnGe/GaAs junctions, focusing on the effect of the interface geometry on the relevant electronic and magnetic properties. Our calculations show that half-metallicity, present in bulk Co2MnGe, is lost when the Heusler compound is deposited on the semiconducting substrate, emphasizing the importance of interface effects in the design and efficiency of spin-injection processes. Our calculated local magnetic moments on the interface atoms show that the magnetic properties are not strongly affected by the presence of the interface, except for the Co-terminated case, where the Co atoms on the bridge site show a tendency towards magnetism quenching, similar to the Fe/GaAs junction.
Original language | English |
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Pages (from-to) | 1697-1701 |
Number of pages | 5 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 64 |
Issue number | 9-10 |
DOIs | |
Publication status | Published - Sep 1 2003 |
Keywords
- A. Semiconductors
- C. Ab initio calculations
- D. Magnetic properties
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics