Flexible inorganic/organic hybrid thin-film transistors using all-transparent component materials

Lian Wang, Myung Han Yoon, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

A high quality In2O3 semiconducting channel and a CPB gate dielectric on Melinex PET (polyethylene terepthalate) substrates, transparent and flexible inorganic-organic hybrid TFTs (thin film transistors) were achieved at near room temperature by scalable fabrication process. The thin films were deposited at room temperature by ion-assisted deposition (IAD), a scalable process combining two active ion beams to manipulate film growth, oxidation and crystallization. The microstructures and surface morphologies of the In2O3 channel layers were characterized by X-ray diffraction and atomic force microscopy. The secondary ion mass spectroscopy results show that the TFTs have abrupt channel, dielectric gate interfaces and minimal interfacial cross-diffusion.

Original languageEnglish
Pages (from-to)3252-3256
Number of pages5
JournalAdvanced Materials
Volume19
Issue number20
DOIs
Publication statusPublished - Oct 19 2007

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Gate dielectrics
Thin film transistors
Ions
Polyethylene
Film growth
Crystallization
Ion beams
Surface morphology
Polyethylenes
Atomic force microscopy
Spectroscopy
Fabrication
X ray diffraction
Thin films
Oxidation
Temperature
Microstructure
Substrates
Lavsan

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Flexible inorganic/organic hybrid thin-film transistors using all-transparent component materials. / Wang, Lian; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.

In: Advanced Materials, Vol. 19, No. 20, 19.10.2007, p. 3252-3256.

Research output: Contribution to journalArticle

Wang, Lian ; Yoon, Myung Han ; Facchetti, Antonio ; Marks, Tobin J. / Flexible inorganic/organic hybrid thin-film transistors using all-transparent component materials. In: Advanced Materials. 2007 ; Vol. 19, No. 20. pp. 3252-3256.
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