Abstract
The wire-array based Schottky diodes were prepared from the polymer-embedded Si wire arrays films. The study described the fabrication of arrays of highly oriented, single-crystalline Si wire light absorbers and charge conductors embedded in a polymeric film. Large area Si wire arrays were grown by the vapor-liquid-solid (VLS) growth process on a silicon substrate was demonstrated. The wires were embedded into a polydimethylsiloxane (PDMS) polymer matrix. The PDMS solution was cast into the Si wire array and subsequently cured. Cross-sectional scanning electron microscopy images of the PDMS/Si wire array composite films revealed intimate contact between the wires and the PDMS films. The thickness of the PDMS film determined both the structural integrity of the composite and the extent to which Si wires were exposed. The process resulted in arrays of well-ordered, vertically oriented, crystalline Si wires that were 1.5-2.0μm in diameter.
| Original language | English |
|---|---|
| Pages (from-to) | 325-328 |
| Number of pages | 4 |
| Journal | Advanced Materials |
| Volume | 21 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Jan 19 2009 |
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ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
Cite this
Flexible polymer-embedded Si wire arrays. / Plass, Katherine E.; Filler, Michael A.; Spurgeon, Joshua M.; Kayes, Brendan M.; Maldonado, Stephen; Brunschwig, Bruce S.; Atwater, Harry A.; Lewis, Nathan S.
In: Advanced Materials, Vol. 21, No. 3, 19.01.2009, p. 325-328.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Flexible polymer-embedded Si wire arrays
AU - Plass, Katherine E.
AU - Filler, Michael A.
AU - Spurgeon, Joshua M.
AU - Kayes, Brendan M.
AU - Maldonado, Stephen
AU - Brunschwig, Bruce S.
AU - Atwater, Harry A.
AU - Lewis, Nathan S
PY - 2009/1/19
Y1 - 2009/1/19
N2 - The wire-array based Schottky diodes were prepared from the polymer-embedded Si wire arrays films. The study described the fabrication of arrays of highly oriented, single-crystalline Si wire light absorbers and charge conductors embedded in a polymeric film. Large area Si wire arrays were grown by the vapor-liquid-solid (VLS) growth process on a silicon substrate was demonstrated. The wires were embedded into a polydimethylsiloxane (PDMS) polymer matrix. The PDMS solution was cast into the Si wire array and subsequently cured. Cross-sectional scanning electron microscopy images of the PDMS/Si wire array composite films revealed intimate contact between the wires and the PDMS films. The thickness of the PDMS film determined both the structural integrity of the composite and the extent to which Si wires were exposed. The process resulted in arrays of well-ordered, vertically oriented, crystalline Si wires that were 1.5-2.0μm in diameter.
AB - The wire-array based Schottky diodes were prepared from the polymer-embedded Si wire arrays films. The study described the fabrication of arrays of highly oriented, single-crystalline Si wire light absorbers and charge conductors embedded in a polymeric film. Large area Si wire arrays were grown by the vapor-liquid-solid (VLS) growth process on a silicon substrate was demonstrated. The wires were embedded into a polydimethylsiloxane (PDMS) polymer matrix. The PDMS solution was cast into the Si wire array and subsequently cured. Cross-sectional scanning electron microscopy images of the PDMS/Si wire array composite films revealed intimate contact between the wires and the PDMS films. The thickness of the PDMS film determined both the structural integrity of the composite and the extent to which Si wires were exposed. The process resulted in arrays of well-ordered, vertically oriented, crystalline Si wires that were 1.5-2.0μm in diameter.
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U2 - 10.1002/adma.200802006
DO - 10.1002/adma.200802006
M3 - Article
VL - 21
SP - 325
EP - 328
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 3
ER -