Fluorine-enhanced plasma growth of native layers on silicon

Robert P. H. Chang, C. C. Chang, S. Darack

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Fluorine-enhanced low-temperature (≤600°C) plasma growth of oxides and nitrides from Si has been studied. It is shown that the growth rates are greatly increased by incorporation of less than 1/2 atomic percent fluorine into the films. Auger profiles of fluorine-enhanced-plasma-grown SiO2 films show that they are nearly indistinguishable from those grown thermally. Uniform silicon oxynitride films (with N/O concentration ratios near 2) of thicknesses over 1000 Å can be grown in about four hours.

Original languageEnglish
Pages (from-to)999-1002
Number of pages4
JournalApplied Physics Letters
Volume36
Issue number12
DOIs
Publication statusPublished - 1980

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fluorine
silicon
oxynitrides
cold plasmas
nitrides
oxides
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fluorine-enhanced plasma growth of native layers on silicon. / Chang, Robert P. H.; Chang, C. C.; Darack, S.

In: Applied Physics Letters, Vol. 36, No. 12, 1980, p. 999-1002.

Research output: Contribution to journalArticle

Chang, Robert P. H. ; Chang, C. C. ; Darack, S. / Fluorine-enhanced plasma growth of native layers on silicon. In: Applied Physics Letters. 1980 ; Vol. 36, No. 12. pp. 999-1002.
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