Fluorine-enhanced plasma growth of native layers on silicon

Robert P. H. Chang, C. C. Chang, S. Darack

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Abstract

Fluorine-enhanced low-temperature (≤600°C) plasma growth of oxides and nitrides from Si has been studied. It is shown that the growth rates are greatly increased by incorporation of less than 1/2 atomic percent fluorine into the films. Auger profiles of fluorine-enhanced-plasma-grown SiO2 films show that they are nearly indistinguishable from those grown thermally. Uniform silicon oxynitride films (with N/O concentration ratios near 2) of thicknesses over 1000 Å can be grown in about four hours.

Original languageEnglish
Pages (from-to)999-1002
Number of pages4
JournalApplied Physics Letters
Volume36
Issue number12
DOIs
Publication statusPublished - 1980

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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