Flux crystal growth of the ternary polygermanide LaPtGe2, a p-type metal

Daniel E. Bugaris, Mihai Sturza, Fei Han, Jino Im, Duck Young Chung, Arthur J Freeman, Mercouri G Kanatzidis

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Large plate crystals of LaPtGe2 have been grown by using an inert indium metal flux. This compound crystallizes in the CeNiSi2-type structure (orthorhombic space group Cmcm) with lattice parameters a = 4.3770(9) Å, b = 17.186(3) Å, and c = 4.3942(9) Å. The structure of LaPtGe2 is a three-dimensional framework with alternating PbO-type layers of PtGe and infinite Ge chains, separated by La atoms. Electrical resistivity and Hall effect measurements characterize LaPtGe2 as a metal with holes that act as the charge carriers. Strong temperature dependence of the Hall coefficient and a violation of Kohler's rule (from magnetoresistance data) both indicate possible multiband effects. The electronic structure calculations suggest the metallic nature of LaPtGe2 and show that the strongest bonding exists between Pt and Ge within the PbO-type layers. Plate crystals of LaPtGe2 have been grown from a molten indium flux. This compound crystallizes in the CeNiSi2-type structure. Electrical resistivity, Hall effect, and thermopower measurements have shown that LaPtGe2 exhibits p-type metallic behavior, which is consistent with electronic band structure calculations.

Original languageEnglish
Pages (from-to)2164-2172
Number of pages9
JournalEuropean Journal of Inorganic Chemistry
Volume2015
Issue number12
DOIs
Publication statusPublished - Mar 20 2015

Keywords

  • Charge transport measurements
  • Crystal growth
  • Germanium
  • Magnetoresistance
  • X-ray diffraction

ASJC Scopus subject areas

  • Inorganic Chemistry

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