Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode

Jun Tatebayashi, Baolai Liang, David A. Bussian, Han Htoon, Shenghong Huang, Ganesh Balakrishnan, Victor I Klimov, L. Ralph Dawson, Diana L. Huffaker

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report the formation and optical characteristics of GaSb/GaAs type-II quantum dots (QDs) by using an interfacial misfit (IMF) growth mode. A V/III ratio during the growth of GaSb QDs determines the selectivity of IMF and conventional StranskiKrastanov (SK) growth modes. This transition between SK and optimized IMF QDs is rather abrupt and occurs within a factor-of-2 variations in V/III ratio. The IMF QDs emit at longer wavelength ($\cong {1.1} \mu$m) compared to the SK QD peak emission at $ \cong {1.02} \mu$m at low temperature (LT) (4 K) because of their strain-free nature of the IMF growth mode. A blueshift of the photoluminescence (PL) peak is observed with increased excitation densities due to the Coulomb interaction between physically separated electrons and holes characteristics of the type-II band alignment. LT time-resolved PL measurements show a long decay time of $ \cong {20}$40 ns from the transition between GaSb IMF QDs and GaAs 2-D electron gas, which is characteristic of the type-II band alignment.

Original languageEnglish
Article number4667660
Pages (from-to)269-274
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume8
Issue number2
DOIs
Publication statusPublished - Mar 2009

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Laser modes
Semiconductor quantum dots
Photoluminescence
Electron gas
Coulomb interactions
Wavelength
Temperature
Electrons

Keywords

  • GaSb/GaAs
  • Interfacial misfit (IMF)
  • Quantum dots (QDs)
  • Strain-relieved
  • Time-resolved photoluminescence (TRPL)
  • Type-II

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Tatebayashi, J., Liang, B., Bussian, D. A., Htoon, H., Huang, S., Balakrishnan, G., ... Huffaker, D. L. (2009). Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode. IEEE Transactions on Nanotechnology, 8(2), 269-274. [4667660]. https://doi.org/10.1109/TNANO.2008.2008717

Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode. / Tatebayashi, Jun; Liang, Baolai; Bussian, David A.; Htoon, Han; Huang, Shenghong; Balakrishnan, Ganesh; Klimov, Victor I; Dawson, L. Ralph; Huffaker, Diana L.

In: IEEE Transactions on Nanotechnology, Vol. 8, No. 2, 4667660, 03.2009, p. 269-274.

Research output: Contribution to journalArticle

Tatebayashi, J, Liang, B, Bussian, DA, Htoon, H, Huang, S, Balakrishnan, G, Klimov, VI, Dawson, LR & Huffaker, DL 2009, 'Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode', IEEE Transactions on Nanotechnology, vol. 8, no. 2, 4667660, pp. 269-274. https://doi.org/10.1109/TNANO.2008.2008717
Tatebayashi, Jun ; Liang, Baolai ; Bussian, David A. ; Htoon, Han ; Huang, Shenghong ; Balakrishnan, Ganesh ; Klimov, Victor I ; Dawson, L. Ralph ; Huffaker, Diana L. / Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode. In: IEEE Transactions on Nanotechnology. 2009 ; Vol. 8, No. 2. pp. 269-274.
@article{add6404dae1241a9a0a79f631ccd9f39,
title = "Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode",
abstract = "We report the formation and optical characteristics of GaSb/GaAs type-II quantum dots (QDs) by using an interfacial misfit (IMF) growth mode. A V/III ratio during the growth of GaSb QDs determines the selectivity of IMF and conventional StranskiKrastanov (SK) growth modes. This transition between SK and optimized IMF QDs is rather abrupt and occurs within a factor-of-2 variations in V/III ratio. The IMF QDs emit at longer wavelength ($\cong {1.1} \mu$m) compared to the SK QD peak emission at $ \cong {1.02} \mu$m at low temperature (LT) (4 K) because of their strain-free nature of the IMF growth mode. A blueshift of the photoluminescence (PL) peak is observed with increased excitation densities due to the Coulomb interaction between physically separated electrons and holes characteristics of the type-II band alignment. LT time-resolved PL measurements show a long decay time of $ \cong {20}$40 ns from the transition between GaSb IMF QDs and GaAs 2-D electron gas, which is characteristic of the type-II band alignment.",
keywords = "GaSb/GaAs, Interfacial misfit (IMF), Quantum dots (QDs), Strain-relieved, Time-resolved photoluminescence (TRPL), Type-II",
author = "Jun Tatebayashi and Baolai Liang and Bussian, {David A.} and Han Htoon and Shenghong Huang and Ganesh Balakrishnan and Klimov, {Victor I} and Dawson, {L. Ralph} and Huffaker, {Diana L.}",
year = "2009",
month = "3",
doi = "10.1109/TNANO.2008.2008717",
language = "English",
volume = "8",
pages = "269--274",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode

AU - Tatebayashi, Jun

AU - Liang, Baolai

AU - Bussian, David A.

AU - Htoon, Han

AU - Huang, Shenghong

AU - Balakrishnan, Ganesh

AU - Klimov, Victor I

AU - Dawson, L. Ralph

AU - Huffaker, Diana L.

PY - 2009/3

Y1 - 2009/3

N2 - We report the formation and optical characteristics of GaSb/GaAs type-II quantum dots (QDs) by using an interfacial misfit (IMF) growth mode. A V/III ratio during the growth of GaSb QDs determines the selectivity of IMF and conventional StranskiKrastanov (SK) growth modes. This transition between SK and optimized IMF QDs is rather abrupt and occurs within a factor-of-2 variations in V/III ratio. The IMF QDs emit at longer wavelength ($\cong {1.1} \mu$m) compared to the SK QD peak emission at $ \cong {1.02} \mu$m at low temperature (LT) (4 K) because of their strain-free nature of the IMF growth mode. A blueshift of the photoluminescence (PL) peak is observed with increased excitation densities due to the Coulomb interaction between physically separated electrons and holes characteristics of the type-II band alignment. LT time-resolved PL measurements show a long decay time of $ \cong {20}$40 ns from the transition between GaSb IMF QDs and GaAs 2-D electron gas, which is characteristic of the type-II band alignment.

AB - We report the formation and optical characteristics of GaSb/GaAs type-II quantum dots (QDs) by using an interfacial misfit (IMF) growth mode. A V/III ratio during the growth of GaSb QDs determines the selectivity of IMF and conventional StranskiKrastanov (SK) growth modes. This transition between SK and optimized IMF QDs is rather abrupt and occurs within a factor-of-2 variations in V/III ratio. The IMF QDs emit at longer wavelength ($\cong {1.1} \mu$m) compared to the SK QD peak emission at $ \cong {1.02} \mu$m at low temperature (LT) (4 K) because of their strain-free nature of the IMF growth mode. A blueshift of the photoluminescence (PL) peak is observed with increased excitation densities due to the Coulomb interaction between physically separated electrons and holes characteristics of the type-II band alignment. LT time-resolved PL measurements show a long decay time of $ \cong {20}$40 ns from the transition between GaSb IMF QDs and GaAs 2-D electron gas, which is characteristic of the type-II band alignment.

KW - GaSb/GaAs

KW - Interfacial misfit (IMF)

KW - Quantum dots (QDs)

KW - Strain-relieved

KW - Time-resolved photoluminescence (TRPL)

KW - Type-II

UR - http://www.scopus.com/inward/record.url?scp=62449260918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62449260918&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2008.2008717

DO - 10.1109/TNANO.2008.2008717

M3 - Article

AN - SCOPUS:62449260918

VL - 8

SP - 269

EP - 274

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 2

M1 - 4667660

ER -