Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode

Jun Tatebayashi, Baolai Liang, David A. Bussian, Han Htoon, Shenghong Huang, Ganesh Balakrishnan, Victor Klimov, L. Ralph Dawson, Diana L. Huffaker

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8 Citations (Scopus)

Abstract

We report the formation and optical characteristics of GaSb/GaAs type-II quantum dots (QDs) by using an interfacial misfit (IMF) growth mode. A V/III ratio during the growth of GaSb QDs determines the selectivity of IMF and conventional StranskiKrastanov (SK) growth modes. This transition between SK and optimized IMF QDs is rather abrupt and occurs within a factor-of-2 variations in V/III ratio. The IMF QDs emit at longer wavelength ($\cong {1.1} \mu$m) compared to the SK QD peak emission at $ \cong {1.02} \mu$m at low temperature (LT) (4 K) because of their strain-free nature of the IMF growth mode. A blueshift of the photoluminescence (PL) peak is observed with increased excitation densities due to the Coulomb interaction between physically separated electrons and holes characteristics of the type-II band alignment. LT time-resolved PL measurements show a long decay time of $ \cong {20}$40 ns from the transition between GaSb IMF QDs and GaAs 2-D electron gas, which is characteristic of the type-II band alignment.

Original languageEnglish
Article number4667660
Pages (from-to)269-274
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume8
Issue number2
DOIs
Publication statusPublished - Mar 1 2009

Keywords

  • GaSb/GaAs
  • Interfacial misfit (IMF)
  • Quantum dots (QDs)
  • Strain-relieved
  • Time-resolved photoluminescence (TRPL)
  • Type-II

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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    Tatebayashi, J., Liang, B., Bussian, D. A., Htoon, H., Huang, S., Balakrishnan, G., Klimov, V., Dawson, L. R., & Huffaker, D. L. (2009). Formation and optical characteristics of type-II strain-relieved GaSb/GaAs quantum dots by using an interfacial misfit growth mode. IEEE Transactions on Nanotechnology, 8(2), 269-274. [4667660]. https://doi.org/10.1109/TNANO.2008.2008717