FORMATION AND STRUCTURE OF CVD W FILMS PRODUCED BY THE Si REDUCTION OF WF//6.

M. L. Green, Y. S. Ali, T. Boone, B. A. Davidson, Leonard C Feldman, S. Nakahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we present data on the formation and structure of CVD W films deposited by the Si reduction of WF//6. Although the great majority of CVD W films deposited for IC applications are ostensibly deposited by H//2 reduction, the Si reduction of WF//6 always occurs first, even in the presence of copious amounts of H//2. Therefore, it is the Si reduction reaction that determines the nature of W/Si interface, and, in turn, such important properties as contact resistance and leakage current. We have found that Si reduced W films deposited between 210 degree C and 700 degree C are porous and discontinuous, and are probably not effective barriers to the further diffusion of WF//6.

Original languageEnglish
Title of host publicationProceedings - The Electrochemical Society
EditorsL.B. Rothman, T. Herndon
PublisherElectrochemical Soc Inc
Pages1-23
Number of pages23
Volume87-4
Publication statusPublished - 1987

ASJC Scopus subject areas

  • Engineering(all)

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