In this paper, we present data on the formation and structure of CVD W films deposited by the Si reduction of WF//6. Although the great majority of CVD W films deposited for IC applications are ostensibly deposited by H//2 reduction, the Si reduction of WF//6 always occurs first, even in the presence of copious amounts of H//2. Therefore, it is the Si reduction reaction that determines the nature of W/Si interface, and, in turn, such important properties as contact resistance and leakage current. We have found that Si reduced W films deposited between 210 degree C and 700 degree C are porous and discontinuous, and are probably not effective barriers to the further diffusion of WF//6.
|Title of host publication||Proceedings - The Electrochemical Society|
|Editors||L.B. Rothman, T. Herndon|
|Publisher||Electrochemical Soc Inc|
|Number of pages||23|
|Publication status||Published - 1987|
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