FORMATION AND STRUCTURE OF CVD W FILMS PRODUCED BY THE Si REDUCTION OF WF//6.

M. L. Green, Y. S. Ali, T. Boone, B. A. Davidson, Leonard C Feldman, S. Nakahara

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Abstract

The authors present data on the formation and structure of CVD W films deposited by the Si reduction of WF//6. Although the great majority of CVD W films deposited for IC applications are ostensibly deposited by H//2 reduction, the Si reduction of WF//6 always occurs first, even in the presence of copious amounts of H//2. Therefore, it is the Si reduction reaction that determines the nature of W/Si interface, and, in turn, such important properties as contact resistance and leakage current. We have found that Si reduced W films deposited between 210 degree and 700 degree C are porous and discontinuous, and are probably not effective barriers to the further diffusion of WF//6. The discontinuous structure of the films provides a simple mechanism for the growth of thick W films by Si reduction; such thick films have been observed with increasing frequency as of late and have been enigmatic, because the reaction between WF//6 and Si was thought to be self-limiting.

Original languageEnglish
Pages (from-to)2285-2292
Number of pages8
JournalJournal of the Electrochemical Society
Volumel34
Issue number9
Publication statusPublished - Sep 1987

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ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Green, M. L., Ali, Y. S., Boone, T., Davidson, B. A., Feldman, L. C., & Nakahara, S. (1987). FORMATION AND STRUCTURE OF CVD W FILMS PRODUCED BY THE Si REDUCTION OF WF//6. Journal of the Electrochemical Society, l34(9), 2285-2292.