Formation of native defects in the γ-ray detector material Cs 2 Hg6S7

Jino Im, Hosub Jin, Hao Li, John A. Peters, Zhifu Liu, Bruce W. Wessels, Mercouri G Kanatzidis, Arthur J Freeman

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

Semiconductor γ-ray detectors have broad applications, yet finding superior detector materials is a challenge because of its contradictory requirements. Here, we investigated a large set of native defects in Cs 2 Hg6 S7 that has been suggested as a promising candidate for detector materials. Using first-principles calculations, we showed that S-vacancy and Hg Cs-antisite defect provide life-time limiting deep levels, and Cs-vacancy forms a shallow acceptor level, resulting in low resistivity. To decrease such detrimental effects, concentrations of defects and carriers were examined in various chemical environments, which reveal that carrier densities can be extremely reduced by adjusting Cs partial pressure.

Original languageEnglish
Article number202103
JournalApplied Physics Letters
Volume101
Issue number20
DOIs
Publication statusPublished - Nov 12 2012

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rays
detectors
defects
antisite defects
partial pressure
adjusting
life (durability)
requirements
electrical resistivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of native defects in the γ-ray detector material Cs 2 Hg6S7. / Im, Jino; Jin, Hosub; Li, Hao; Peters, John A.; Liu, Zhifu; Wessels, Bruce W.; Kanatzidis, Mercouri G; Freeman, Arthur J.

In: Applied Physics Letters, Vol. 101, No. 20, 202103, 12.11.2012.

Research output: Contribution to journal › Article

Im, J, Jin, H, Li, H, Peters, JA, Liu, Z, Wessels, BW, Kanatzidis, MG & Freeman, AJ 2012, 'Formation of native defects in the γ-ray detector material Cs 2 Hg6S7', Applied Physics Letters, vol. 101, no. 20, 202103. https://doi.org/10.1063/1.4767368
Im J, Jin H, Li H, Peters JA, Liu Z, Wessels BW et al. Formation of native defects in the γ-ray detector material Cs 2 Hg6S7. Applied Physics Letters. 2012 Nov 12;101(20). 202103. https://doi.org/10.1063/1.4767368
Im, Jino ; Jin, Hosub ; Li, Hao ; Peters, John A. ; Liu, Zhifu ; Wessels, Bruce W. ; Kanatzidis, Mercouri G ; Freeman, Arthur J. / Formation of native defects in the γ-ray detector material Cs 2 Hg6S7. In: Applied Physics Letters. 2012 ; Vol. 101, No. 20.
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