Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures

R. K. Chanana, K. McDonald, M. Di Ventra, S. T. Pantelides, Leonard C Feldman, G. Y. Chung, C. C. Tin, J. R. Williams, R. A. Weller

Research output: Contribution to journalArticle

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Abstract

We report the confirmed occurrence of Fowler-Nordheim hole tunneling in p-4H-SiC metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of 0.35m-0.52m, where m is the free electron mass.

Original languageEnglish
Pages (from-to)2560-2562
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number16
Publication statusPublished - Oct 16 2000

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electron mass
metal oxide semiconductors
free electrons
capacitors
occurrences
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chanana, R. K., McDonald, K., Di Ventra, M., Pantelides, S. T., Feldman, L. C., Chung, G. Y., ... Weller, R. A. (2000). Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures. Applied Physics Letters, 77(16), 2560-2562.

Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures. / Chanana, R. K.; McDonald, K.; Di Ventra, M.; Pantelides, S. T.; Feldman, Leonard C; Chung, G. Y.; Tin, C. C.; Williams, J. R.; Weller, R. A.

In: Applied Physics Letters, Vol. 77, No. 16, 16.10.2000, p. 2560-2562.

Research output: Contribution to journalArticle

Chanana, RK, McDonald, K, Di Ventra, M, Pantelides, ST, Feldman, LC, Chung, GY, Tin, CC, Williams, JR & Weller, RA 2000, 'Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures', Applied Physics Letters, vol. 77, no. 16, pp. 2560-2562.
Chanana RK, McDonald K, Di Ventra M, Pantelides ST, Feldman LC, Chung GY et al. Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures. Applied Physics Letters. 2000 Oct 16;77(16):2560-2562.
Chanana, R. K. ; McDonald, K. ; Di Ventra, M. ; Pantelides, S. T. ; Feldman, Leonard C ; Chung, G. Y. ; Tin, C. C. ; Williams, J. R. ; Weller, R. A. / Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures. In: Applied Physics Letters. 2000 ; Vol. 77, No. 16. pp. 2560-2562.
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