Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures

R. K. Chanana, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams, R. A. Weller

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Abstract

We report the confirmed occurrence of Fowler-Nordheim hole tunneling in p-4H-SiC metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of 0.35m-0.52m, where m is the free electron mass.

Original languageEnglish
Pages (from-to)2560-2562
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number16
DOIs
Publication statusPublished - Oct 16 2000

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chanana, R. K., McDonald, K., Di Ventra, M., Pantelides, S. T., Feldman, L. C., Chung, G. Y., Tin, C. C., Williams, J. R., & Weller, R. A. (2000). Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures. Applied Physics Letters, 77(16), 2560-2562. https://doi.org/10.1063/1.1318229