Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures

R. K. Chanana, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams, R. A. Weller

Research output: Contribution to journalArticlepeer-review

75 Citations (Scopus)


We report the confirmed occurrence of Fowler-Nordheim hole tunneling in p-4H-SiC metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of 0.35m-0.52m, where m is the free electron mass.

Original languageEnglish
Pages (from-to)2560-2562
Number of pages3
JournalApplied Physics Letters
Issue number16
Publication statusPublished - Oct 16 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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