From unstable CsSnI3 to air-stable Cs2SnI6

A lead-free perovskite solar cell light absorber with bandgap of 1.48 eV and high absorption coefficient

Xiaofeng Qiu, Bingqiang Cao, Shuai Yuan, Xiangfeng Chen, Zhiwen Qiu, Yanan Jiang, Qian Ye, Hongqiang Wang, Haibo Zeng, Jian Liu, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

All-inorganic and lead-free cesium tin halides (CsSnX3, X=Cl, Br, I) are highly desirable for substituting the organolead halide perovskite solar cells. However, the poor stability of CsSnX3 perovskites has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. In this paper, a two-step sequential deposition method is developed to grow high-quality B-γ-CsSnI3 thin films and their unique phase change in atmosphere is explored in detail. We find the spontaneous oxidative conversion from unstable B-γ-CsSnI3 to air-stable Cs2SnI6 in air. Allowing the phase conversion of the CsSnI3 film to evolve in ambient air it gives the semiconducting perovskite Cs2SnI6 with a bandgap of 1.48 eV and high absorption coefficient (over 105 cm−1 from 1.7 eV). More importantly, the Cs2SnI6 film, for the first time, is adopted as a light absorber layer for a lead-free perovskite solar cell and a preliminary estimate of the power conversion efficiency (PCE) about 1% with open-circuit voltage of 0.51 V and short-circuit current of 5.41 mA/cm2 is realized by optimizing the perovskite absorber thickness. According to the bandgap and the Shockley-Queisser limit, such inorganic perovskite solar cell with higher efficiency and pronounced stability can be expected by material quality improvement and device engineering.

Original languageEnglish
Pages (from-to)227-234
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume159
DOIs
Publication statusPublished - Jan 1 2017

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Energy gap
Lead
Perovskite
Air
Cesium
Tin
Open circuit voltage
Short circuit currents
Conversion efficiency
Fabrication
Thin films
Perovskite solar cells
perovskite

Keywords

  • Air-stable
  • CsSnI
  • Lead-free
  • Perovskite absorber
  • Solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

From unstable CsSnI3 to air-stable Cs2SnI6 : A lead-free perovskite solar cell light absorber with bandgap of 1.48 eV and high absorption coefficient. / Qiu, Xiaofeng; Cao, Bingqiang; Yuan, Shuai; Chen, Xiangfeng; Qiu, Zhiwen; Jiang, Yanan; Ye, Qian; Wang, Hongqiang; Zeng, Haibo; Liu, Jian; Kanatzidis, Mercouri G.

In: Solar Energy Materials and Solar Cells, Vol. 159, 01.01.2017, p. 227-234.

Research output: Contribution to journalArticle

Qiu, Xiaofeng ; Cao, Bingqiang ; Yuan, Shuai ; Chen, Xiangfeng ; Qiu, Zhiwen ; Jiang, Yanan ; Ye, Qian ; Wang, Hongqiang ; Zeng, Haibo ; Liu, Jian ; Kanatzidis, Mercouri G. / From unstable CsSnI3 to air-stable Cs2SnI6 : A lead-free perovskite solar cell light absorber with bandgap of 1.48 eV and high absorption coefficient. In: Solar Energy Materials and Solar Cells. 2017 ; Vol. 159. pp. 227-234.
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abstract = "All-inorganic and lead-free cesium tin halides (CsSnX3, X=Cl, Br, I) are highly desirable for substituting the organolead halide perovskite solar cells. However, the poor stability of CsSnX3 perovskites has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. In this paper, a two-step sequential deposition method is developed to grow high-quality B-γ-CsSnI3 thin films and their unique phase change in atmosphere is explored in detail. We find the spontaneous oxidative conversion from unstable B-γ-CsSnI3 to air-stable Cs2SnI6 in air. Allowing the phase conversion of the CsSnI3 film to evolve in ambient air it gives the semiconducting perovskite Cs2SnI6 with a bandgap of 1.48 eV and high absorption coefficient (over 105 cm−1 from 1.7 eV). More importantly, the Cs2SnI6 film, for the first time, is adopted as a light absorber layer for a lead-free perovskite solar cell and a preliminary estimate of the power conversion efficiency (PCE) about 1{\%} with open-circuit voltage of 0.51 V and short-circuit current of 5.41 mA/cm2 is realized by optimizing the perovskite absorber thickness. According to the bandgap and the Shockley-Queisser limit, such inorganic perovskite solar cell with higher efficiency and pronounced stability can be expected by material quality improvement and device engineering.",
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T1 - From unstable CsSnI3 to air-stable Cs2SnI6

T2 - A lead-free perovskite solar cell light absorber with bandgap of 1.48 eV and high absorption coefficient

AU - Qiu, Xiaofeng

AU - Cao, Bingqiang

AU - Yuan, Shuai

AU - Chen, Xiangfeng

AU - Qiu, Zhiwen

AU - Jiang, Yanan

AU - Ye, Qian

AU - Wang, Hongqiang

AU - Zeng, Haibo

AU - Liu, Jian

AU - Kanatzidis, Mercouri G

PY - 2017/1/1

Y1 - 2017/1/1

N2 - All-inorganic and lead-free cesium tin halides (CsSnX3, X=Cl, Br, I) are highly desirable for substituting the organolead halide perovskite solar cells. However, the poor stability of CsSnX3 perovskites has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. In this paper, a two-step sequential deposition method is developed to grow high-quality B-γ-CsSnI3 thin films and their unique phase change in atmosphere is explored in detail. We find the spontaneous oxidative conversion from unstable B-γ-CsSnI3 to air-stable Cs2SnI6 in air. Allowing the phase conversion of the CsSnI3 film to evolve in ambient air it gives the semiconducting perovskite Cs2SnI6 with a bandgap of 1.48 eV and high absorption coefficient (over 105 cm−1 from 1.7 eV). More importantly, the Cs2SnI6 film, for the first time, is adopted as a light absorber layer for a lead-free perovskite solar cell and a preliminary estimate of the power conversion efficiency (PCE) about 1% with open-circuit voltage of 0.51 V and short-circuit current of 5.41 mA/cm2 is realized by optimizing the perovskite absorber thickness. According to the bandgap and the Shockley-Queisser limit, such inorganic perovskite solar cell with higher efficiency and pronounced stability can be expected by material quality improvement and device engineering.

AB - All-inorganic and lead-free cesium tin halides (CsSnX3, X=Cl, Br, I) are highly desirable for substituting the organolead halide perovskite solar cells. However, the poor stability of CsSnX3 perovskites has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. In this paper, a two-step sequential deposition method is developed to grow high-quality B-γ-CsSnI3 thin films and their unique phase change in atmosphere is explored in detail. We find the spontaneous oxidative conversion from unstable B-γ-CsSnI3 to air-stable Cs2SnI6 in air. Allowing the phase conversion of the CsSnI3 film to evolve in ambient air it gives the semiconducting perovskite Cs2SnI6 with a bandgap of 1.48 eV and high absorption coefficient (over 105 cm−1 from 1.7 eV). More importantly, the Cs2SnI6 film, for the first time, is adopted as a light absorber layer for a lead-free perovskite solar cell and a preliminary estimate of the power conversion efficiency (PCE) about 1% with open-circuit voltage of 0.51 V and short-circuit current of 5.41 mA/cm2 is realized by optimizing the perovskite absorber thickness. According to the bandgap and the Shockley-Queisser limit, such inorganic perovskite solar cell with higher efficiency and pronounced stability can be expected by material quality improvement and device engineering.

KW - Air-stable

KW - CsSnI

KW - Lead-free

KW - Perovskite absorber

KW - Solar cell

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JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

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