TY - JOUR
T1 - From unstable CsSnI3 to air-stable Cs2SnI6
T2 - A lead-free perovskite solar cell light absorber with bandgap of 1.48 eV and high absorption coefficient
AU - Qiu, Xiaofeng
AU - Cao, Bingqiang
AU - Yuan, Shuai
AU - Chen, Xiangfeng
AU - Qiu, Zhiwen
AU - Jiang, Yanan
AU - Ye, Qian
AU - Wang, Hongqiang
AU - Zeng, Haibo
AU - Liu, Jian
AU - Kanatzidis, Mercouri G.
N1 - Funding Information:
This work is supported by NSFC ( 51472110 ) and Natural Science Foundation of Shandong Province ( JQ201214 , 2014ZRB01A47 ). HQW acknowledges the support from Marie Curie Intro-European Fellowship and the 1000 Youth Talents Plan of China . HBZ acknowledges the support from National Basic Research Program of China ( 2014CB931700 ). Work at Northwestern University was supported by the ANSER Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences under Award Number DE-SC0001059 .
PY - 2017/1/1
Y1 - 2017/1/1
N2 - All-inorganic and lead-free cesium tin halides (CsSnX3, X=Cl, Br, I) are highly desirable for substituting the organolead halide perovskite solar cells. However, the poor stability of CsSnX3 perovskites has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. In this paper, a two-step sequential deposition method is developed to grow high-quality B-γ-CsSnI3 thin films and their unique phase change in atmosphere is explored in detail. We find the spontaneous oxidative conversion from unstable B-γ-CsSnI3 to air-stable Cs2SnI6 in air. Allowing the phase conversion of the CsSnI3 film to evolve in ambient air it gives the semiconducting perovskite Cs2SnI6 with a bandgap of 1.48 eV and high absorption coefficient (over 105 cm−1 from 1.7 eV). More importantly, the Cs2SnI6 film, for the first time, is adopted as a light absorber layer for a lead-free perovskite solar cell and a preliminary estimate of the power conversion efficiency (PCE) about 1% with open-circuit voltage of 0.51 V and short-circuit current of 5.41 mA/cm2 is realized by optimizing the perovskite absorber thickness. According to the bandgap and the Shockley-Queisser limit, such inorganic perovskite solar cell with higher efficiency and pronounced stability can be expected by material quality improvement and device engineering.
AB - All-inorganic and lead-free cesium tin halides (CsSnX3, X=Cl, Br, I) are highly desirable for substituting the organolead halide perovskite solar cells. However, the poor stability of CsSnX3 perovskites has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. In this paper, a two-step sequential deposition method is developed to grow high-quality B-γ-CsSnI3 thin films and their unique phase change in atmosphere is explored in detail. We find the spontaneous oxidative conversion from unstable B-γ-CsSnI3 to air-stable Cs2SnI6 in air. Allowing the phase conversion of the CsSnI3 film to evolve in ambient air it gives the semiconducting perovskite Cs2SnI6 with a bandgap of 1.48 eV and high absorption coefficient (over 105 cm−1 from 1.7 eV). More importantly, the Cs2SnI6 film, for the first time, is adopted as a light absorber layer for a lead-free perovskite solar cell and a preliminary estimate of the power conversion efficiency (PCE) about 1% with open-circuit voltage of 0.51 V and short-circuit current of 5.41 mA/cm2 is realized by optimizing the perovskite absorber thickness. According to the bandgap and the Shockley-Queisser limit, such inorganic perovskite solar cell with higher efficiency and pronounced stability can be expected by material quality improvement and device engineering.
KW - Air-stable
KW - CsSnI
KW - Lead-free
KW - Perovskite absorber
KW - Solar cell
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U2 - 10.1016/j.solmat.2016.09.022
DO - 10.1016/j.solmat.2016.09.022
M3 - Article
AN - SCOPUS:84988464604
VL - 159
SP - 227
EP - 234
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -