Frumkin corrections for heterogeneous rate constants at semiconducting electrodes

William J. Royea, Olaf Krüger, Nathan S Lewis

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Frumkin corrections for semiconductor electrodes have been evaluated in both depletion and accumulation conditions. In conjunction with the Gouy-Chapman-Stern model, a finite difference approach was used to calculate the potential drop in a depleted semiconductor and in the compact and diffuse layers of the contacting solution as a function of the potential applied to the solid|liquid interface. At potentials greater than 30 mV positive of the flat-band potential Efb the potential drop across the solution accounts for less than 3% of the total potential drop across an n-type semiconductor of dopant density 1 × 1015 cm-3 in a methanolic solution of 1.0M LiCl. Under these conditions, the concentration of a non-adsorbing, dipositively-charged redox species at the outer Helmholtz plane does not vary from its concentration in the bulk of the solution by more than 2%. This relatively small concentration gradient and potential drop across the Helmholtz layer combine to produce negligible Frumkin correction terms for kinetic data at depleted semiconductor electrodes compared to those for metallic electrodes at the same applied potential relative to the potential of zero charge. Under accumulation conditions, the potential drop across the solution is more significant, and the concentration of redox species at the surface can be as much as twice as great as that in the bulk of the solution. However, these conditions require an applied potential of -1 V relative to Efb. Additionally, under all conditions that were simulated, the correction to the driving force used to evaluate the heterogeneous rate constant does not exceed 2% of the uncorrected heterogeneous rate constant.

Original languageEnglish
Pages (from-to)191-197
Number of pages7
JournalJournal of Electroanalytical Chemistry
Volume438
Issue number1-2
Publication statusPublished - Nov 25 1997

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Rate constants
Electrodes
Semiconductor materials
Doping (additives)
Kinetics
Liquids
Oxidation-Reduction

Keywords

  • Accumulation condition
  • Depletion condition
  • Frumkin corrections
  • Heterogeneous rate constants
  • Semiconducting electrodes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Analytical Chemistry
  • Electrochemistry

Cite this

Frumkin corrections for heterogeneous rate constants at semiconducting electrodes. / Royea, William J.; Krüger, Olaf; Lewis, Nathan S.

In: Journal of Electroanalytical Chemistry, Vol. 438, No. 1-2, 25.11.1997, p. 191-197.

Research output: Contribution to journalArticle

@article{6776675ba29b42aa9f50bb38dfd51e5f,
title = "Frumkin corrections for heterogeneous rate constants at semiconducting electrodes",
abstract = "Frumkin corrections for semiconductor electrodes have been evaluated in both depletion and accumulation conditions. In conjunction with the Gouy-Chapman-Stern model, a finite difference approach was used to calculate the potential drop in a depleted semiconductor and in the compact and diffuse layers of the contacting solution as a function of the potential applied to the solid|liquid interface. At potentials greater than 30 mV positive of the flat-band potential Efb the potential drop across the solution accounts for less than 3{\%} of the total potential drop across an n-type semiconductor of dopant density 1 × 1015 cm-3 in a methanolic solution of 1.0M LiCl. Under these conditions, the concentration of a non-adsorbing, dipositively-charged redox species at the outer Helmholtz plane does not vary from its concentration in the bulk of the solution by more than 2{\%}. This relatively small concentration gradient and potential drop across the Helmholtz layer combine to produce negligible Frumkin correction terms for kinetic data at depleted semiconductor electrodes compared to those for metallic electrodes at the same applied potential relative to the potential of zero charge. Under accumulation conditions, the potential drop across the solution is more significant, and the concentration of redox species at the surface can be as much as twice as great as that in the bulk of the solution. However, these conditions require an applied potential of -1 V relative to Efb. Additionally, under all conditions that were simulated, the correction to the driving force used to evaluate the heterogeneous rate constant does not exceed 2{\%} of the uncorrected heterogeneous rate constant.",
keywords = "Accumulation condition, Depletion condition, Frumkin corrections, Heterogeneous rate constants, Semiconducting electrodes",
author = "Royea, {William J.} and Olaf Kr{\"u}ger and Lewis, {Nathan S}",
year = "1997",
month = "11",
day = "25",
language = "English",
volume = "438",
pages = "191--197",
journal = "Journal of Electroanalytical Chemistry",
issn = "1572-6657",
publisher = "Elsevier Sequoia",
number = "1-2",

}

TY - JOUR

T1 - Frumkin corrections for heterogeneous rate constants at semiconducting electrodes

AU - Royea, William J.

AU - Krüger, Olaf

AU - Lewis, Nathan S

PY - 1997/11/25

Y1 - 1997/11/25

N2 - Frumkin corrections for semiconductor electrodes have been evaluated in both depletion and accumulation conditions. In conjunction with the Gouy-Chapman-Stern model, a finite difference approach was used to calculate the potential drop in a depleted semiconductor and in the compact and diffuse layers of the contacting solution as a function of the potential applied to the solid|liquid interface. At potentials greater than 30 mV positive of the flat-band potential Efb the potential drop across the solution accounts for less than 3% of the total potential drop across an n-type semiconductor of dopant density 1 × 1015 cm-3 in a methanolic solution of 1.0M LiCl. Under these conditions, the concentration of a non-adsorbing, dipositively-charged redox species at the outer Helmholtz plane does not vary from its concentration in the bulk of the solution by more than 2%. This relatively small concentration gradient and potential drop across the Helmholtz layer combine to produce negligible Frumkin correction terms for kinetic data at depleted semiconductor electrodes compared to those for metallic electrodes at the same applied potential relative to the potential of zero charge. Under accumulation conditions, the potential drop across the solution is more significant, and the concentration of redox species at the surface can be as much as twice as great as that in the bulk of the solution. However, these conditions require an applied potential of -1 V relative to Efb. Additionally, under all conditions that were simulated, the correction to the driving force used to evaluate the heterogeneous rate constant does not exceed 2% of the uncorrected heterogeneous rate constant.

AB - Frumkin corrections for semiconductor electrodes have been evaluated in both depletion and accumulation conditions. In conjunction with the Gouy-Chapman-Stern model, a finite difference approach was used to calculate the potential drop in a depleted semiconductor and in the compact and diffuse layers of the contacting solution as a function of the potential applied to the solid|liquid interface. At potentials greater than 30 mV positive of the flat-band potential Efb the potential drop across the solution accounts for less than 3% of the total potential drop across an n-type semiconductor of dopant density 1 × 1015 cm-3 in a methanolic solution of 1.0M LiCl. Under these conditions, the concentration of a non-adsorbing, dipositively-charged redox species at the outer Helmholtz plane does not vary from its concentration in the bulk of the solution by more than 2%. This relatively small concentration gradient and potential drop across the Helmholtz layer combine to produce negligible Frumkin correction terms for kinetic data at depleted semiconductor electrodes compared to those for metallic electrodes at the same applied potential relative to the potential of zero charge. Under accumulation conditions, the potential drop across the solution is more significant, and the concentration of redox species at the surface can be as much as twice as great as that in the bulk of the solution. However, these conditions require an applied potential of -1 V relative to Efb. Additionally, under all conditions that were simulated, the correction to the driving force used to evaluate the heterogeneous rate constant does not exceed 2% of the uncorrected heterogeneous rate constant.

KW - Accumulation condition

KW - Depletion condition

KW - Frumkin corrections

KW - Heterogeneous rate constants

KW - Semiconducting electrodes

UR - http://www.scopus.com/inward/record.url?scp=0031276286&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031276286&partnerID=8YFLogxK

M3 - Article

VL - 438

SP - 191

EP - 197

JO - Journal of Electroanalytical Chemistry

JF - Journal of Electroanalytical Chemistry

SN - 1572-6657

IS - 1-2

ER -