Fully first-principles screened-exchange LDA calculations of excited states and optical properties of III-V semiconductors

S. H. Rhim, Miyoung Kim, Arthur J Freeman, Ryoji Asahi

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Optical properties, such as the imaginary part of the dielectric function, index of refraction, reflectivity, and absorption coefficient, [ε 2(ω),n(ω),k(ω),R(ω),α(ω)] of some III-V semiconductors (InAs, InSb, GaSb, and AlSb), are determined using our highly precise full-potential linearized augmented plane wave method with the screened-exchange local density approximation (sX-LDA) solved self-consistently and with spin-orbit coupling included. Here ε 2(ω) is calculated using the longitudinal expression with full e iq·r matrix elements due to the nonlocality of the potential in the sX-LDA method, and its structure is analyzed with band structures and consideration of interband transitions. The critical point energies are also studied in comparison with experiment. The results of these fully first-principles calculations (no scissor operator or semiempirical inputs) show good agreement of the peak positions in ε 2(ω) , n(ω)+ik(ω), R(ω), α(ω) and critical point energies with experiments.

Original languageEnglish
Article number045202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number4
DOIs
Publication statusPublished - Jan 2005

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Local density approximation
Excited states
critical point
Optical properties
optical properties
coefficients
Electron transitions
Refraction
approximation
Band structure
excitation
Mathematical operators
refraction
absorptivity
Orbits
plane waves
Experiments
orbits
reflectance
operators

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Fully first-principles screened-exchange LDA calculations of excited states and optical properties of III-V semiconductors. / Rhim, S. H.; Kim, Miyoung; Freeman, Arthur J; Asahi, Ryoji.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 4, 045202, 01.2005.

Research output: Contribution to journalArticle

@article{d6b043153f1b4b88a80422d3fe808095,
title = "Fully first-principles screened-exchange LDA calculations of excited states and optical properties of III-V semiconductors",
abstract = "Optical properties, such as the imaginary part of the dielectric function, index of refraction, reflectivity, and absorption coefficient, [ε 2(ω),n(ω),k(ω),R(ω),α(ω)] of some III-V semiconductors (InAs, InSb, GaSb, and AlSb), are determined using our highly precise full-potential linearized augmented plane wave method with the screened-exchange local density approximation (sX-LDA) solved self-consistently and with spin-orbit coupling included. Here ε 2(ω) is calculated using the longitudinal expression with full e iq·r matrix elements due to the nonlocality of the potential in the sX-LDA method, and its structure is analyzed with band structures and consideration of interband transitions. The critical point energies are also studied in comparison with experiment. The results of these fully first-principles calculations (no scissor operator or semiempirical inputs) show good agreement of the peak positions in ε 2(ω) , n(ω)+ik(ω), R(ω), α(ω) and critical point energies with experiments.",
author = "Rhim, {S. H.} and Miyoung Kim and Freeman, {Arthur J} and Ryoji Asahi",
year = "2005",
month = "1",
doi = "10.1103/PhysRevB.71.045202",
language = "English",
volume = "71",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "4",

}

TY - JOUR

T1 - Fully first-principles screened-exchange LDA calculations of excited states and optical properties of III-V semiconductors

AU - Rhim, S. H.

AU - Kim, Miyoung

AU - Freeman, Arthur J

AU - Asahi, Ryoji

PY - 2005/1

Y1 - 2005/1

N2 - Optical properties, such as the imaginary part of the dielectric function, index of refraction, reflectivity, and absorption coefficient, [ε 2(ω),n(ω),k(ω),R(ω),α(ω)] of some III-V semiconductors (InAs, InSb, GaSb, and AlSb), are determined using our highly precise full-potential linearized augmented plane wave method with the screened-exchange local density approximation (sX-LDA) solved self-consistently and with spin-orbit coupling included. Here ε 2(ω) is calculated using the longitudinal expression with full e iq·r matrix elements due to the nonlocality of the potential in the sX-LDA method, and its structure is analyzed with band structures and consideration of interband transitions. The critical point energies are also studied in comparison with experiment. The results of these fully first-principles calculations (no scissor operator or semiempirical inputs) show good agreement of the peak positions in ε 2(ω) , n(ω)+ik(ω), R(ω), α(ω) and critical point energies with experiments.

AB - Optical properties, such as the imaginary part of the dielectric function, index of refraction, reflectivity, and absorption coefficient, [ε 2(ω),n(ω),k(ω),R(ω),α(ω)] of some III-V semiconductors (InAs, InSb, GaSb, and AlSb), are determined using our highly precise full-potential linearized augmented plane wave method with the screened-exchange local density approximation (sX-LDA) solved self-consistently and with spin-orbit coupling included. Here ε 2(ω) is calculated using the longitudinal expression with full e iq·r matrix elements due to the nonlocality of the potential in the sX-LDA method, and its structure is analyzed with band structures and consideration of interband transitions. The critical point energies are also studied in comparison with experiment. The results of these fully first-principles calculations (no scissor operator or semiempirical inputs) show good agreement of the peak positions in ε 2(ω) , n(ω)+ik(ω), R(ω), α(ω) and critical point energies with experiments.

UR - http://www.scopus.com/inward/record.url?scp=15744374857&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15744374857&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.71.045202

DO - 10.1103/PhysRevB.71.045202

M3 - Article

VL - 71

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 4

M1 - 045202

ER -