Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics

Vinod K. Sangwan, Rocio Ponce Ortiz, Justice M P Alaboson, Jonathan D. Emery, Michael J. Bedzyk, Lincoln J. Lauhon, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

106 Citations (Scopus)

Abstract

In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm 2/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10 5), while also achieving hysteresis-free operation in ambient conditions.

Original languageEnglish
Pages (from-to)7480-7488
Number of pages9
JournalACS Nano
Volume6
Issue number8
DOIs
Publication statusPublished - Aug 28 2012

Fingerprint

Carbon Nanotubes
Thin film transistors
Carbon nanotubes
transistors
carbon nanotubes
Gate dielectrics
thin films
Transistors
Flexible electronics
Transconductance
transconductance
electronics
Self assembly
Hysteresis
self assembly
Materials properties
purity
Electronic equipment
Tuning
hysteresis

Keywords

  • density gradient ultracentrifugation
  • mobility
  • nanoelectronics
  • self-assembled nanodielectrics
  • subthreshold swing
  • transconductance

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Sangwan, V. K., Ortiz, R. P., Alaboson, J. M. P., Emery, J. D., Bedzyk, M. J., Lauhon, L. J., ... Hersam, M. C. (2012). Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics. ACS Nano, 6(8), 7480-7488. https://doi.org/10.1021/nn302768h

Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics. / Sangwan, Vinod K.; Ortiz, Rocio Ponce; Alaboson, Justice M P; Emery, Jonathan D.; Bedzyk, Michael J.; Lauhon, Lincoln J.; Marks, Tobin J; Hersam, Mark C.

In: ACS Nano, Vol. 6, No. 8, 28.08.2012, p. 7480-7488.

Research output: Contribution to journalArticle

Sangwan VK, Ortiz RP, Alaboson JMP, Emery JD, Bedzyk MJ, Lauhon LJ et al. Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics. ACS Nano. 2012 Aug 28;6(8):7480-7488. https://doi.org/10.1021/nn302768h
Sangwan, Vinod K. ; Ortiz, Rocio Ponce ; Alaboson, Justice M P ; Emery, Jonathan D. ; Bedzyk, Michael J. ; Lauhon, Lincoln J. ; Marks, Tobin J ; Hersam, Mark C. / Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics. In: ACS Nano. 2012 ; Vol. 6, No. 8. pp. 7480-7488.
@article{3c0b63474dba492587dc56e1bfd01e05,
title = "Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics",
abstract = "In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm 2/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10 5), while also achieving hysteresis-free operation in ambient conditions.",
keywords = "density gradient ultracentrifugation, mobility, nanoelectronics, self-assembled nanodielectrics, subthreshold swing, transconductance",
author = "Sangwan, {Vinod K.} and Ortiz, {Rocio Ponce} and Alaboson, {Justice M P} and Emery, {Jonathan D.} and Bedzyk, {Michael J.} and Lauhon, {Lincoln J.} and Marks, {Tobin J} and Hersam, {Mark C}",
year = "2012",
month = "8",
day = "28",
doi = "10.1021/nn302768h",
language = "English",
volume = "6",
pages = "7480--7488",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "8",

}

TY - JOUR

T1 - Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics

AU - Sangwan, Vinod K.

AU - Ortiz, Rocio Ponce

AU - Alaboson, Justice M P

AU - Emery, Jonathan D.

AU - Bedzyk, Michael J.

AU - Lauhon, Lincoln J.

AU - Marks, Tobin J

AU - Hersam, Mark C

PY - 2012/8/28

Y1 - 2012/8/28

N2 - In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm 2/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10 5), while also achieving hysteresis-free operation in ambient conditions.

AB - In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm 2/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10 5), while also achieving hysteresis-free operation in ambient conditions.

KW - density gradient ultracentrifugation

KW - mobility

KW - nanoelectronics

KW - self-assembled nanodielectrics

KW - subthreshold swing

KW - transconductance

UR - http://www.scopus.com/inward/record.url?scp=84865596834&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865596834&partnerID=8YFLogxK

U2 - 10.1021/nn302768h

DO - 10.1021/nn302768h

M3 - Article

VL - 6

SP - 7480

EP - 7488

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 8

ER -