Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics

Vinod K. Sangwan, Rocio Ponce Ortiz, Justice M P Alaboson, Jonathan D. Emery, Michael J. Bedzyk, Lincoln J. Lauhon, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

110 Citations (Scopus)

Abstract

In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm 2/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10 5), while also achieving hysteresis-free operation in ambient conditions.

Original languageEnglish
Pages (from-to)7480-7488
Number of pages9
JournalACS Nano
Volume6
Issue number8
DOIs
Publication statusPublished - Aug 28 2012

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Keywords

  • density gradient ultracentrifugation
  • mobility
  • nanoelectronics
  • self-assembled nanodielectrics
  • subthreshold swing
  • transconductance

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Sangwan, V. K., Ortiz, R. P., Alaboson, J. M. P., Emery, J. D., Bedzyk, M. J., Lauhon, L. J., ... Hersam, M. C. (2012). Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics. ACS Nano, 6(8), 7480-7488. https://doi.org/10.1021/nn302768h