Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition

J. Zhong, S. Muthukumar, Y. Chen, Y. Lu, H. M. Ng, W. Jiang, Eric Garfunkel

Research output: Contribution to journal › Article

170 Citations (Scopus)

Abstract

The growth of zinc oxide nanotips on amorphous fused silica with the help of metallorganic chemical vapor deposition was studied. Ga-doped zinc oxide nanotips possesed the characteristics of single crystal. The good optical properties with negligible deep level emission in photoluminescence spectra were found in ZnO nanotips. Atomic force microscopy was used for measuring the current-voltage characteristics.

Original languageEnglish
Pages (from-to)3401-3403
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number16
DOIs
Publication statusPublished - Oct 20 2003

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doped crystals
zinc oxides
metalorganic chemical vapor deposition
silicon dioxide
single crystals
vapor deposition
atomic force microscopy
photoluminescence
optical properties
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition. / Zhong, J.; Muthukumar, S.; Chen, Y.; Lu, Y.; Ng, H. M.; Jiang, W.; Garfunkel, Eric.

In: Applied Physics Letters, Vol. 83, No. 16, 20.10.2003, p. 3401-3403.

Research output: Contribution to journal › Article

Zhong, J, Muthukumar, S, Chen, Y, Lu, Y, Ng, HM, Jiang, W & Garfunkel, E 2003, 'Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition', Applied Physics Letters, vol. 83, no. 16, pp. 3401-3403. https://doi.org/10.1063/1.1621729
Zhong J, Muthukumar S, Chen Y, Lu Y, Ng HM, Jiang W et al. Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition. Applied Physics Letters. 2003 Oct 20;83(16):3401-3403. https://doi.org/10.1063/1.1621729
Zhong, J. ; Muthukumar, S. ; Chen, Y. ; Lu, Y. ; Ng, H. M. ; Jiang, W. ; Garfunkel, Eric. / Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition. In: Applied Physics Letters. 2003 ; Vol. 83, No. 16. pp. 3401-3403.
@article{a9c299b6fc504db892b6679a1377c38c,
title = "Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition",
abstract = "The growth of zinc oxide nanotips on amorphous fused silica with the help of metallorganic chemical vapor deposition was studied. Ga-doped zinc oxide nanotips possesed the characteristics of single crystal. The good optical properties with negligible deep level emission in photoluminescence spectra were found in ZnO nanotips. Atomic force microscopy was used for measuring the current-voltage characteristics.",
author = "J. Zhong and S. Muthukumar and Y. Chen and Y. Lu and Ng, {H. M.} and W. Jiang and Eric Garfunkel",
year = "2003",
month = "10",
day = "20",
doi = "10.1063/1.1621729",
language = "English",
volume = "83",
pages = "3401--3403",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition

AU - Zhong, J.

AU - Muthukumar, S.

AU - Chen, Y.

AU - Lu, Y.

AU - Ng, H. M.

AU - Jiang, W.

AU - Garfunkel, Eric

PY - 2003/10/20

Y1 - 2003/10/20

N2 - The growth of zinc oxide nanotips on amorphous fused silica with the help of metallorganic chemical vapor deposition was studied. Ga-doped zinc oxide nanotips possesed the characteristics of single crystal. The good optical properties with negligible deep level emission in photoluminescence spectra were found in ZnO nanotips. Atomic force microscopy was used for measuring the current-voltage characteristics.

AB - The growth of zinc oxide nanotips on amorphous fused silica with the help of metallorganic chemical vapor deposition was studied. Ga-doped zinc oxide nanotips possesed the characteristics of single crystal. The good optical properties with negligible deep level emission in photoluminescence spectra were found in ZnO nanotips. Atomic force microscopy was used for measuring the current-voltage characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0242494821&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242494821&partnerID=8YFLogxK

U2 - 10.1063/1.1621729

DO - 10.1063/1.1621729

M3 - Article

VL - 83

SP - 3401

EP - 3403

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -

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