Gallium flux synthesis of Tb3-xC2Si8(B12)3

A novel quaternary boron-rich phase containing b12 icosahedra

James R. Salvador, Daniel Bilc, S. D. Mahanti, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Synthesis in molten gallium provides access to a new class of boron-rich quaternary phases. Its first member, Tb1.8C2Si8(B12)3, represents a new structure type in which B12 icosahedra, eight Si atoms in a staggered ethane-like arrangement, and C2 units are interconnected (see picture; red: Si, blue: B, black: C). The Tb sites have a partial occupation of about 60%.

Original languageEnglish
Pages (from-to)844-846
Number of pages3
JournalAngewandte Chemie - International Edition
Volume41
Issue number5
DOIs
Publication statusPublished - Mar 1 2002

Fingerprint

Gallium
Ethane
Boron
Molten materials
Fluxes
Atoms

Keywords

  • Boron
  • Gallium
  • High-temperature chemistry
  • Lanthanides
  • Silicon

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Gallium flux synthesis of Tb3-xC2Si8(B12)3 : A novel quaternary boron-rich phase containing b12 icosahedra. / Salvador, James R.; Bilc, Daniel; Mahanti, S. D.; Kanatzidis, Mercouri G.

In: Angewandte Chemie - International Edition, Vol. 41, No. 5, 01.03.2002, p. 844-846.

Research output: Contribution to journalArticle

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