TY - JOUR
T1 - Gate dielectrics for organic field-effect transistors
T2 - New opportunities for organic electronics
AU - Facchetti, Antonio
AU - Yoon, Myung Han
AU - Marks, Tobin J.
PY - 2005/7/18
Y1 - 2005/7/18
N2 - In this contribution we review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin-film transistors (OTFTs) for organic electronics. After a general introduction to OTFT materials, operating principles, and processing requirements for optimizing low-cost organic electronics, this review focuses on three classes of OTFT-compatible dielectrics: i) inorganic (high-k) materials; ii) polymeric materials; and iii) self-assembled mono- and/multilayer materials. The principal goals in this active research area are tunable and reduced OTFT operating voltages, leading to decreased device power consumption while providing excellent dielectric/insulator properties and efficient low-cost solution-phase processing characteristics.
AB - In this contribution we review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin-film transistors (OTFTs) for organic electronics. After a general introduction to OTFT materials, operating principles, and processing requirements for optimizing low-cost organic electronics, this review focuses on three classes of OTFT-compatible dielectrics: i) inorganic (high-k) materials; ii) polymeric materials; and iii) self-assembled mono- and/multilayer materials. The principal goals in this active research area are tunable and reduced OTFT operating voltages, leading to decreased device power consumption while providing excellent dielectric/insulator properties and efficient low-cost solution-phase processing characteristics.
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U2 - 10.1002/adma.200500517
DO - 10.1002/adma.200500517
M3 - Review article
AN - SCOPUS:23044480892
VL - 17
SP - 1705
EP - 1725
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 14
ER -