Gate dielectrics for organic field-effect transistors

New opportunities for organic electronics

Antonio Facchetti, Myung Han Yoon, Tobin J Marks

Research output: Contribution to journalArticle

855 Citations (Scopus)

Abstract

In this contribution we review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin-film transistors (OTFTs) for organic electronics. After a general introduction to OTFT materials, operating principles, and processing requirements for optimizing low-cost organic electronics, this review focuses on three classes of OTFT-compatible dielectrics: i) inorganic (high-k) materials; ii) polymeric materials; and iii) self-assembled mono- and/multilayer materials. The principal goals in this active research area are tunable and reduced OTFT operating voltages, leading to decreased device power consumption while providing excellent dielectric/insulator properties and efficient low-cost solution-phase processing characteristics.

Original languageEnglish
Pages (from-to)1705-1725
Number of pages21
JournalAdvanced Materials
Volume17
Issue number14
DOIs
Publication statusPublished - Jul 18 2005

Fingerprint

Organic field effect transistors
Gate dielectrics
Thin film transistors
Electronic equipment
Processing
Costs
Multilayers
Electric power utilization
Electric potential
Polymers

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Gate dielectrics for organic field-effect transistors : New opportunities for organic electronics. / Facchetti, Antonio; Yoon, Myung Han; Marks, Tobin J.

In: Advanced Materials, Vol. 17, No. 14, 18.07.2005, p. 1705-1725.

Research output: Contribution to journalArticle

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