TY - GEN
T1 - Gate metal-induced diffusion and interface reactions in Hf oxide films on Si
AU - Goncharova, Lyudmila V.
AU - Dalponte, Mateus
AU - Celik, Ozgur
AU - Garfunkel, Eric
AU - Gustafsson, Torgny
AU - Lysaght, Pat S.
AU - Bersuker, Gennadi I.
PY - 2007/10/22
Y1 - 2007/10/22
N2 - When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.
AB - When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.
KW - Alternative gate dielectrics
KW - Ion beam analysis
KW - Oxygen diffiision
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U2 - 10.1063/1.2799392
DO - 10.1063/1.2799392
M3 - Conference contribution
AN - SCOPUS:35348830355
SN - 0735404410
SN - 9780735404410
T3 - AIP Conference Proceedings
SP - 324
EP - 328
BT - CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS
T2 - CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology
Y2 - 27 March 2007 through 29 March 2007
ER -