Gate metal-induced diffusion and interface reactions in Hf oxide films on Si

Lyudmila V. Goncharova, Mateus Dalponte, Ozgur Celik, Eric Garfunkel, Torgny Gustafsson, Pat S. Lysaght, Gennadi I. Bersuker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.

Original languageEnglish
Title of host publicationCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS
Subtitle of host publication2007 International Conference on Frontiers of Characterization and Metrology
Pages324-328
Number of pages5
DOIs
Publication statusPublished - Oct 22 2007
EventCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology - Gaithersburg, MD, United States
Duration: Mar 27 2007Mar 29 2007

Publication series

NameAIP Conference Proceedings
Volume931
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology
CountryUnited States
CityGaithersburg, MD
Period3/27/073/29/07

Keywords

  • Alternative gate dielectrics
  • Ion beam analysis
  • Oxygen diffiision

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation

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  • Cite this

    Goncharova, L. V., Dalponte, M., Celik, O., Garfunkel, E., Gustafsson, T., Lysaght, P. S., & Bersuker, G. I. (2007). Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. In CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology (pp. 324-328). (AIP Conference Proceedings; Vol. 931). https://doi.org/10.1063/1.2799392