Gate metal-induced diffusion and interface reactions in Hf oxide films on Si

Lyudmila V. Goncharova; Mateus Dalponte; Ozgur Celik; Eric Garfunkel; Torgny Gustafsson; Pat S. Lysaght; Gennadi I. Bersuker

doi:10.1063/1.2799392

Gate metal-induced diffusion and interface reactions in Hf oxide films on Si

Lyudmila V. Goncharova, Mateus Dalponte, Ozgur Celik, Eric Garfunkel, Torgny Gustafsson, Pat S. Lysaght, Gennadi I. Bersuker

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

When metal electrodes are deposited on a high-κ metal-oxide/SiO ₂/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO₂/SiO₂/Si stacks causes reduction of the SiO₂ interfacial layer and (to a lesser extent) the HfO ₂ layer. Silicon atoms initially present in the interfacial SiO ₂ layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO₂ films is also reported.

Original language	English
Title of host publication	CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS
Subtitle of host publication	2007 International Conference on Frontiers of Characterization and Metrology
Pages	324-328
Number of pages	5
DOIs	https://doi.org/10.1063/1.2799392
Publication status	Published - Oct 22 2007
Event	CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology - Gaithersburg, MD, United States Duration: Mar 27 2007 → Mar 29 2007

Publication series

Name	AIP Conference Proceedings
Volume	931
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology
Country	United States
City	Gaithersburg, MD
Period	3/27/07 → 3/29/07

Keywords

Alternative gate dielectrics
Ion beam analysis
Oxygen diffiision

ASJC Scopus subject areas

Ecology, Evolution, Behavior and Systematics
Ecology
Plant Science
Physics and Astronomy(all)
Nature and Landscape Conservation

Access to Document

10.1063/1.2799392

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Cite this

Goncharova, L. V., Dalponte, M., Celik, O., Garfunkel, E., Gustafsson, T., Lysaght, P. S., & Bersuker, G. I. (2007). Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. In CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology (pp. 324-328). (AIP Conference Proceedings; Vol. 931). https://doi.org/10.1063/1.2799392

Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. / Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny; Lysaght, Pat S.; Bersuker, Gennadi I.

CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. 2007. p. 324-328 (AIP Conference Proceedings; Vol. 931).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Goncharova, LV, Dalponte, M, Celik, O, Garfunkel, E, Gustafsson, T, Lysaght, PS & Bersuker, GI 2007, Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. in CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. AIP Conference Proceedings, vol. 931, pp. 324-328, CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology, Gaithersburg, MD, United States, 3/27/07. https://doi.org/10.1063/1.2799392

Goncharova LV, Dalponte M, Celik O, Garfunkel E, Gustafsson T, Lysaght PS et al. Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. In CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. 2007. p. 324-328. (AIP Conference Proceedings). https://doi.org/10.1063/1.2799392

Goncharova, Lyudmila V. ; Dalponte, Mateus ; Celik, Ozgur ; Garfunkel, Eric ; Gustafsson, Torgny ; Lysaght, Pat S. ; Bersuker, Gennadi I. / Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. 2007. pp. 324-328 (AIP Conference Proceedings).

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abstract = "When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.",

keywords = "Alternative gate dielectrics, Ion beam analysis, Oxygen diffiision",

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AU - Goncharova, Lyudmila V.

AU - Dalponte, Mateus

AU - Celik, Ozgur

AU - Garfunkel, Eric

AU - Gustafsson, Torgny

AU - Lysaght, Pat S.

AU - Bersuker, Gennadi I.

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N2 - When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.

AB - When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.

KW - Alternative gate dielectrics

KW - Ion beam analysis

KW - Oxygen diffiision

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