Abstract
When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.
| Original language | English |
|---|---|
| Title of host publication | AIP Conference Proceedings |
| Pages | 324-328 |
| Number of pages | 5 |
| Volume | 931 |
| DOIs | |
| Publication status | Published - 2007 |
| Event | CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology - Gaithersburg, MD, United States Duration: Mar 27 2007 → Mar 29 2007 |
Other
| Other | CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology |
|---|---|
| Country | United States |
| City | Gaithersburg, MD |
| Period | 3/27/07 → 3/29/07 |
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Keywords
- Alternative gate dielectrics
- Ion beam analysis
- Oxygen diffiision
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. / Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny; Lysaght, Pat S.; Bersuker, Gennadi I.
AIP Conference Proceedings. Vol. 931 2007. p. 324-328.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Gate metal-induced diffusion and interface reactions in Hf oxide films on Si
AU - Goncharova, Lyudmila V.
AU - Dalponte, Mateus
AU - Celik, Ozgur
AU - Garfunkel, Eric
AU - Gustafsson, Torgny
AU - Lysaght, Pat S.
AU - Bersuker, Gennadi I.
PY - 2007
Y1 - 2007
N2 - When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.
AB - When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.
KW - Alternative gate dielectrics
KW - Ion beam analysis
KW - Oxygen diffiision
UR - http://www.scopus.com/inward/record.url?scp=35348830355&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35348830355&partnerID=8YFLogxK
U2 - 10.1063/1.2799392
DO - 10.1063/1.2799392
M3 - Conference contribution
SN - 0735404410
SN - 9780735404410
VL - 931
SP - 324
EP - 328
BT - AIP Conference Proceedings
ER -