Gate metal-induced diffusion and interface reactions in Hf oxide films on Si

Lyudmila V. Goncharova, Mateus Dalponte, Ozgur Celik, Eric Garfunkel, Torgny Gustafsson, Pat S. Lysaght, Gennadi I. Bersuker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages324-328
Number of pages5
Volume931
DOIs
Publication statusPublished - 2007
EventCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology - Gaithersburg, MD, United States
Duration: Mar 27 2007Mar 29 2007

Other

OtherCHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology
CountryUnited States
CityGaithersburg, MD
Period3/27/073/29/07

Fingerprint

oxide films
metals
silicon
titanium
ion scattering
metal oxides
photoelectrons
electrodes
causes
oxygen
atoms
x rays
interactions
energy

Keywords

  • Alternative gate dielectrics
  • Ion beam analysis
  • Oxygen diffiision

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Goncharova, L. V., Dalponte, M., Celik, O., Garfunkel, E., Gustafsson, T., Lysaght, P. S., & Bersuker, G. I. (2007). Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. In AIP Conference Proceedings (Vol. 931, pp. 324-328) https://doi.org/10.1063/1.2799392

Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. / Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny; Lysaght, Pat S.; Bersuker, Gennadi I.

AIP Conference Proceedings. Vol. 931 2007. p. 324-328.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Goncharova, LV, Dalponte, M, Celik, O, Garfunkel, E, Gustafsson, T, Lysaght, PS & Bersuker, GI 2007, Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. in AIP Conference Proceedings. vol. 931, pp. 324-328, CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology, Gaithersburg, MD, United States, 3/27/07. https://doi.org/10.1063/1.2799392
Goncharova LV, Dalponte M, Celik O, Garfunkel E, Gustafsson T, Lysaght PS et al. Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. In AIP Conference Proceedings. Vol. 931. 2007. p. 324-328 https://doi.org/10.1063/1.2799392
Goncharova, Lyudmila V. ; Dalponte, Mateus ; Celik, Ozgur ; Garfunkel, Eric ; Gustafsson, Torgny ; Lysaght, Pat S. ; Bersuker, Gennadi I. / Gate metal-induced diffusion and interface reactions in Hf oxide films on Si. AIP Conference Proceedings. Vol. 931 2007. pp. 324-328
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AU - Garfunkel, Eric

AU - Gustafsson, Torgny

AU - Lysaght, Pat S.

AU - Bersuker, Gennadi I.

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AB - When metal electrodes are deposited on a high-κ metal-oxide/SiO 2/Si stack, chemical interactions may occur both at the metal/high-κ and the high-κ/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO2/SiO2/Si stacks causes reduction of the SiO2 interfacial layer and (to a lesser extent) the HfO 2 layer. Silicon atoms initially present in the interfacial SiO 2 layer incorporate into the bottom of the high-κ layer. Some evidence for titanium-silicon interdiffusion through the high-κ film in the presence of a titanium gate in crystalline HfO2 films is also reported.

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