Gate-planarized low-operating voltage organic field-effect transistors enabled by hot polymer pressing/embedding of conducting metal lines

Antonio Facchetti, Myung Han Yoon, Tobin J. Marks

Research output: Contribution to journalArticle

11 Citations (Scopus)


A new process for fabricating patterned, gate-planarized organic field-effect transistors (OFETs) based on hot polymer pressing/embedding of conducting metal features is demonstrated. This methodology is applicable to a variety of gate conductors and polymer matrices. Vapor-deposited Al and Au and printed Ag lines as narrow as 15 μm are transferred from a substrate donor to the hot-pressed polymer, resulting in a new smooth, flat, self-planarized gate-plastic substrate composite on which thin polymer insulators can be spin-coated with great uniformity. OFETs fabricated on these structures with both p- and n-type semiconductors function at low voltages, opening new routes to printed electronic circuits and products.

Original languageEnglish
Pages (from-to)4928-4929
Number of pages2
JournalJournal of the American Chemical Society
Issue number15
Publication statusPublished - Apr 19 2006


ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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