Gate-planarized low-operating voltage organic field-effect transistors enabled by hot polymer pressing/embedding of conducting metal lines

Antonio Facchetti, Myung Han Yoon, Tobin J Marks

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A new process for fabricating patterned, gate-planarized organic field-effect transistors (OFETs) based on hot polymer pressing/embedding of conducting metal features is demonstrated. This methodology is applicable to a variety of gate conductors and polymer matrices. Vapor-deposited Al and Au and printed Ag lines as narrow as 15 μm are transferred from a substrate donor to the hot-pressed polymer, resulting in a new smooth, flat, self-planarized gate-plastic substrate composite on which thin polymer insulators can be spin-coated with great uniformity. OFETs fabricated on these structures with both p- and n-type semiconductors function at low voltages, opening new routes to printed electronic circuits and products.

Original languageEnglish
Pages (from-to)4928-4929
Number of pages2
JournalJournal of the American Chemical Society
Volume128
Issue number15
DOIs
Publication statusPublished - Apr 19 2006

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Organic field effect transistors
Polymers
Metals
Electric potential
Substrates
Polymer matrix
Semiconductors
Vapors
Semiconductor materials
Plastics
Networks (circuits)
Composite materials

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Gate-planarized low-operating voltage organic field-effect transistors enabled by hot polymer pressing/embedding of conducting metal lines. / Facchetti, Antonio; Yoon, Myung Han; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 128, No. 15, 19.04.2006, p. 4928-4929.

Research output: Contribution to journalArticle

@article{0ef431a8d90b4f9a9110b97a0166cae1,
title = "Gate-planarized low-operating voltage organic field-effect transistors enabled by hot polymer pressing/embedding of conducting metal lines",
abstract = "A new process for fabricating patterned, gate-planarized organic field-effect transistors (OFETs) based on hot polymer pressing/embedding of conducting metal features is demonstrated. This methodology is applicable to a variety of gate conductors and polymer matrices. Vapor-deposited Al and Au and printed Ag lines as narrow as 15 μm are transferred from a substrate donor to the hot-pressed polymer, resulting in a new smooth, flat, self-planarized gate-plastic substrate composite on which thin polymer insulators can be spin-coated with great uniformity. OFETs fabricated on these structures with both p- and n-type semiconductors function at low voltages, opening new routes to printed electronic circuits and products.",
author = "Antonio Facchetti and Yoon, {Myung Han} and Marks, {Tobin J}",
year = "2006",
month = "4",
day = "19",
doi = "10.1021/ja058266z",
language = "English",
volume = "128",
pages = "4928--4929",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "15",

}

TY - JOUR

T1 - Gate-planarized low-operating voltage organic field-effect transistors enabled by hot polymer pressing/embedding of conducting metal lines

AU - Facchetti, Antonio

AU - Yoon, Myung Han

AU - Marks, Tobin J

PY - 2006/4/19

Y1 - 2006/4/19

N2 - A new process for fabricating patterned, gate-planarized organic field-effect transistors (OFETs) based on hot polymer pressing/embedding of conducting metal features is demonstrated. This methodology is applicable to a variety of gate conductors and polymer matrices. Vapor-deposited Al and Au and printed Ag lines as narrow as 15 μm are transferred from a substrate donor to the hot-pressed polymer, resulting in a new smooth, flat, self-planarized gate-plastic substrate composite on which thin polymer insulators can be spin-coated with great uniformity. OFETs fabricated on these structures with both p- and n-type semiconductors function at low voltages, opening new routes to printed electronic circuits and products.

AB - A new process for fabricating patterned, gate-planarized organic field-effect transistors (OFETs) based on hot polymer pressing/embedding of conducting metal features is demonstrated. This methodology is applicable to a variety of gate conductors and polymer matrices. Vapor-deposited Al and Au and printed Ag lines as narrow as 15 μm are transferred from a substrate donor to the hot-pressed polymer, resulting in a new smooth, flat, self-planarized gate-plastic substrate composite on which thin polymer insulators can be spin-coated with great uniformity. OFETs fabricated on these structures with both p- and n-type semiconductors function at low voltages, opening new routes to printed electronic circuits and products.

UR - http://www.scopus.com/inward/record.url?scp=33646161966&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646161966&partnerID=8YFLogxK

U2 - 10.1021/ja058266z

DO - 10.1021/ja058266z

M3 - Article

VL - 128

SP - 4928

EP - 4929

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 15

ER -