Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

Deep Jariwala, Vinod K. Sangwan, Chung Chiang Wu, Pradyumna L. Prabhumirashi, Michael L. Geier, Tobin J Marks, Lincoln J. Lauhon, Mark C Hersam

Research output: Contribution to journalArticle

202 Citations (Scopus)

Abstract

The p-n junction diode and field-effect transistor are the two mostubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a widerange of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse

Original languageEnglish
Pages (from-to)18076-18080
Number of pages5
JournalProceedings of the National Academy of Sciences of the United States of America
Volume110
Issue number45
DOIs
Publication statusPublished - Nov 5 2013

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Semiconductors
Carbon Nanotubes
Equipment and Supplies
molybdenum disulfide

Keywords

  • 2D transition metal dichalcogenide
  • Photodetector
  • Rectifier
  • Single layer MoS
  • Van der Waals heterostructure

ASJC Scopus subject areas

  • General

Cite this

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode. / Jariwala, Deep; Sangwan, Vinod K.; Wu, Chung Chiang; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Marks, Tobin J; Lauhon, Lincoln J.; Hersam, Mark C.

In: Proceedings of the National Academy of Sciences of the United States of America, Vol. 110, No. 45, 05.11.2013, p. 18076-18080.

Research output: Contribution to journalArticle

Jariwala, Deep ; Sangwan, Vinod K. ; Wu, Chung Chiang ; Prabhumirashi, Pradyumna L. ; Geier, Michael L. ; Marks, Tobin J ; Lauhon, Lincoln J. ; Hersam, Mark C. / Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode. In: Proceedings of the National Academy of Sciences of the United States of America. 2013 ; Vol. 110, No. 45. pp. 18076-18080.
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