Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

Vinod K. Sangwan, Deep Jariwala, In Soo Kim, Kan Sheng Chen, Tobin J Marks, Lincoln J. Lauhon, Mark C Hersam

Research output: Contribution to journalArticle

229 Citations (Scopus)

Abstract

Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures1-4. The performance of logic and memory can be enhanced significantly by introducing a memristor5,6, a two-terminal device with internal resistance that depends on the history of the external bias voltage5-7. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage3,4,6,8,9. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices10-12. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼103 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.

Original languageEnglish
Pages (from-to)403-406
Number of pages4
JournalNature Nanotechnology
Volume10
Issue number5
DOIs
Publication statusPublished - May 7 2015

Fingerprint

Memristors
Grain boundaries
grain boundaries
Metals
Oxides
Tuning
Data storage equipment
metals
logic
Geometry
emerging
filaments
Electric potential
tuning
high speed
insulators
histories
oxides
electric potential
synthesis

ASJC Scopus subject areas

  • Bioengineering
  • Biomedical Engineering
  • Materials Science(all)
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. / Sangwan, Vinod K.; Jariwala, Deep; Kim, In Soo; Chen, Kan Sheng; Marks, Tobin J; Lauhon, Lincoln J.; Hersam, Mark C.

In: Nature Nanotechnology, Vol. 10, No. 5, 07.05.2015, p. 403-406.

Research output: Contribution to journalArticle

Sangwan, Vinod K. ; Jariwala, Deep ; Kim, In Soo ; Chen, Kan Sheng ; Marks, Tobin J ; Lauhon, Lincoln J. ; Hersam, Mark C. / Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. In: Nature Nanotechnology. 2015 ; Vol. 10, No. 5. pp. 403-406.
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