TY - JOUR
T1 - Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
AU - Sangwan, Vinod K.
AU - Jariwala, Deep
AU - Kim, In Soo
AU - Chen, Kan Sheng
AU - Marks, Tobin J.
AU - Lauhon, Lincoln J.
AU - Hersam, Mark C.
N1 - Publisher Copyright:
© 2015 Macmillan Publishers Limited. All rights reserved.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2015/5/7
Y1 - 2015/5/7
N2 - Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures1-4. The performance of logic and memory can be enhanced significantly by introducing a memristor5,6, a two-terminal device with internal resistance that depends on the history of the external bias voltage5-7. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage3,4,6,8,9. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices10-12. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼103 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.
AB - Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures1-4. The performance of logic and memory can be enhanced significantly by introducing a memristor5,6, a two-terminal device with internal resistance that depends on the history of the external bias voltage5-7. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage3,4,6,8,9. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices10-12. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼103 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.
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U2 - 10.1038/nnano.2015.56
DO - 10.1038/nnano.2015.56
M3 - Article
AN - SCOPUS:84929148808
VL - 10
SP - 403
EP - 406
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
IS - 5
ER -