Abstract
Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures1-4. The performance of logic and memory can be enhanced significantly by introducing a memristor5,6, a two-terminal device with internal resistance that depends on the history of the external bias voltage5-7. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage3,4,6,8,9. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices10-12. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼103 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.
| Original language | English |
|---|---|
| Pages (from-to) | 403-406 |
| Number of pages | 4 |
| Journal | Nature Nanotechnology |
| Volume | 10 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - May 7 2015 |
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ASJC Scopus subject areas
- Bioengineering
- Biomedical Engineering
- Materials Science(all)
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
Cite this
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. / Sangwan, Vinod K.; Jariwala, Deep; Kim, In Soo; Chen, Kan Sheng; Marks, Tobin J; Lauhon, Lincoln J.; Hersam, Mark C.
In: Nature Nanotechnology, Vol. 10, No. 5, 07.05.2015, p. 403-406.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
AU - Sangwan, Vinod K.
AU - Jariwala, Deep
AU - Kim, In Soo
AU - Chen, Kan Sheng
AU - Marks, Tobin J
AU - Lauhon, Lincoln J.
AU - Hersam, Mark C
PY - 2015/5/7
Y1 - 2015/5/7
N2 - Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures1-4. The performance of logic and memory can be enhanced significantly by introducing a memristor5,6, a two-terminal device with internal resistance that depends on the history of the external bias voltage5-7. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage3,4,6,8,9. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices10-12. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼103 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.
AB - Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures1-4. The performance of logic and memory can be enhanced significantly by introducing a memristor5,6, a two-terminal device with internal resistance that depends on the history of the external bias voltage5-7. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO2, are limited by a lack of control over the filament formation and external control of the switching voltage3,4,6,8,9. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS2 devices10-12. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼103 and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS2 enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.
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U2 - 10.1038/nnano.2015.56
DO - 10.1038/nnano.2015.56
M3 - Article
AN - SCOPUS:84929148808
VL - 10
SP - 403
EP - 406
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
IS - 5
ER -