Abstract
We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of poly crystalline MoS2 films with grain sizes of 3-5 μm. The device characteristics show switching ratios up to ∼500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trapping. Top-gated devices achieve reversible tuning of threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures.
| Original language | English |
|---|---|
| Title of host publication | 2017 IEEE International Electron Devices Meeting, IEDM 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 5.1.1-5.1.4 |
| ISBN (Electronic) | 9781538635599 |
| DOIs | |
| Publication status | Published - Jan 23 2018 |
| Event | 63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: Dec 2 2017 → Dec 6 2017 |
Other
| Other | 63rd IEEE International Electron Devices Meeting, IEDM 2017 |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 12/2/17 → 12/6/17 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Gate-tunable memristors from monolayer MoS2 . / Sangwan, Vinod K.; Lee, Hong Sub; Hersam, Mark C.
2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 5.1.1-5.1.4.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Gate-tunable memristors from monolayer MoS2
AU - Sangwan, Vinod K.
AU - Lee, Hong Sub
AU - Hersam, Mark C
PY - 2018/1/23
Y1 - 2018/1/23
N2 - We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of poly crystalline MoS2 films with grain sizes of 3-5 μm. The device characteristics show switching ratios up to ∼500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trapping. Top-gated devices achieve reversible tuning of threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures.
AB - We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of poly crystalline MoS2 films with grain sizes of 3-5 μm. The device characteristics show switching ratios up to ∼500, with the resistance in individual states being continuously gate-tunable by over three orders of magnitude. The resistive switching results from dynamically varying threshold voltage and Schottky barrier heights, whose underlying physical mechanism appears to be vacancy migration and/or charge trapping. Top-gated devices achieve reversible tuning of threshold voltage, with potential utility in non-volatile memory or neuromorphic architectures.
UR - http://www.scopus.com/inward/record.url?scp=85045216849&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85045216849&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2017.8268330
DO - 10.1109/IEDM.2017.8268330
M3 - Conference contribution
AN - SCOPUS:85045216849
SP - 5.1.1-5.1.4
BT - 2017 IEEE International Electron Devices Meeting, IEDM 2017
PB - Institute of Electrical and Electronics Engineers Inc.
ER -