Gated-controlled rectification of a self-assembled monolayer-based transistor

Elad D. Mentovich, Natalie Rosenberg-Shraga, Itsik Kalifa, Michael Gozin, Vladimiro Mujica, Thorsten Hansen, Shachar Richter

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

A vertical gate symmetrical molecular transistor is demonstrated. It includes self-assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I-V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tenths of volts around a threshold value where the junction behaves symmetrically. This is due to charging of the nanoparticle contact, which modifies the spatial profile of the voltage across the junction, a fact that we have included in a simple theoretical model that explains our experimental results quite well. Our device design affords a new way to fine-tune the rectification of molecular devices in a way that does not necessarily involve the Coulomb charging of the wire.

Original languageEnglish
Pages (from-to)8468-8474
Number of pages7
JournalJournal of Physical Chemistry C
Volume117
Issue number16
DOIs
Publication statusPublished - Apr 25 2013

Fingerprint

Self assembled monolayers
rectification
Transistors
transistors
Electric potential
Nanoparticles
Gates (transistor)
charging
Electrodes
electric potential
nanoparticles
electrodes
Wire
Molecules
wire
thresholds
shift
curves
profiles
configurations

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Mentovich, E. D., Rosenberg-Shraga, N., Kalifa, I., Gozin, M., Mujica, V., Hansen, T., & Richter, S. (2013). Gated-controlled rectification of a self-assembled monolayer-based transistor. Journal of Physical Chemistry C, 117(16), 8468-8474. https://doi.org/10.1021/jp311875g

Gated-controlled rectification of a self-assembled monolayer-based transistor. / Mentovich, Elad D.; Rosenberg-Shraga, Natalie; Kalifa, Itsik; Gozin, Michael; Mujica, Vladimiro; Hansen, Thorsten; Richter, Shachar.

In: Journal of Physical Chemistry C, Vol. 117, No. 16, 25.04.2013, p. 8468-8474.

Research output: Contribution to journalArticle

Mentovich, ED, Rosenberg-Shraga, N, Kalifa, I, Gozin, M, Mujica, V, Hansen, T & Richter, S 2013, 'Gated-controlled rectification of a self-assembled monolayer-based transistor', Journal of Physical Chemistry C, vol. 117, no. 16, pp. 8468-8474. https://doi.org/10.1021/jp311875g
Mentovich ED, Rosenberg-Shraga N, Kalifa I, Gozin M, Mujica V, Hansen T et al. Gated-controlled rectification of a self-assembled monolayer-based transistor. Journal of Physical Chemistry C. 2013 Apr 25;117(16):8468-8474. https://doi.org/10.1021/jp311875g
Mentovich, Elad D. ; Rosenberg-Shraga, Natalie ; Kalifa, Itsik ; Gozin, Michael ; Mujica, Vladimiro ; Hansen, Thorsten ; Richter, Shachar. / Gated-controlled rectification of a self-assembled monolayer-based transistor. In: Journal of Physical Chemistry C. 2013 ; Vol. 117, No. 16. pp. 8468-8474.
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