Ge-Si layered structures: Artificial crystals and complex cell ordered superlattices

J. Bevk, J. P. Mannaerts, Leonard C Feldman, B. A. Davidson, A. Ourmazd

Research output: Contribution to journalArticle

115 Citations (Scopus)

Abstract

We report the first successful synthesis of ordered GeSi superlattices grown on (001) Si substrates by molecular beam epitaxy. Two types of structures were prepared and characterized: superlattices with one-dimensional periodicity of one unit cell (GeGeSiSi.) and complex cell superlattices made up of sublayers of pure Si and alternating bilayers of Ge and Si. In the first case, the artificial stacking in the [001] direction results in a vertical array of alternating Ge and Si monolayers parallel to the (110) or (11̄0) planes. In spite of the lattice mismatch of 4.2%, Rutherford backscattering and channeling experiments indicate high quality crystallinity in both types of structures. Long-range order is deduced from the electron diffraction patterns that exhibit characteristic superlattice reflections and from high resolution lattice imaging. The precise deposition control on the scale of a fraction of a monolayer should allow band structure engineering in this and in other related systems and in turn tailoring of the transport and optical properties over a wide range.

Original languageEnglish
Pages (from-to)286-288
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number5
DOIs
Publication statusPublished - 1986

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superlattices
cells
crystals
periodic variations
crystallinity
backscattering
molecular beam epitaxy
diffraction patterns
electron diffraction
transport properties
engineering
optical properties
high resolution
synthesis

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ge-Si layered structures : Artificial crystals and complex cell ordered superlattices. / Bevk, J.; Mannaerts, J. P.; Feldman, Leonard C; Davidson, B. A.; Ourmazd, A.

In: Applied Physics Letters, Vol. 49, No. 5, 1986, p. 286-288.

Research output: Contribution to journalArticle

Bevk, J. ; Mannaerts, J. P. ; Feldman, Leonard C ; Davidson, B. A. ; Ourmazd, A. / Ge-Si layered structures : Artificial crystals and complex cell ordered superlattices. In: Applied Physics Letters. 1986 ; Vol. 49, No. 5. pp. 286-288.
@article{b2c4968bace0408fb95a0ad2df006634,
title = "Ge-Si layered structures: Artificial crystals and complex cell ordered superlattices",
abstract = "We report the first successful synthesis of ordered GeSi superlattices grown on (001) Si substrates by molecular beam epitaxy. Two types of structures were prepared and characterized: superlattices with one-dimensional periodicity of one unit cell (GeGeSiSi.) and complex cell superlattices made up of sublayers of pure Si and alternating bilayers of Ge and Si. In the first case, the artificial stacking in the [001] direction results in a vertical array of alternating Ge and Si monolayers parallel to the (110) or (11̄0) planes. In spite of the lattice mismatch of 4.2{\%}, Rutherford backscattering and channeling experiments indicate high quality crystallinity in both types of structures. Long-range order is deduced from the electron diffraction patterns that exhibit characteristic superlattice reflections and from high resolution lattice imaging. The precise deposition control on the scale of a fraction of a monolayer should allow band structure engineering in this and in other related systems and in turn tailoring of the transport and optical properties over a wide range.",
author = "J. Bevk and Mannaerts, {J. P.} and Feldman, {Leonard C} and Davidson, {B. A.} and A. Ourmazd",
year = "1986",
doi = "10.1063/1.97143",
language = "English",
volume = "49",
pages = "286--288",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Ge-Si layered structures

T2 - Artificial crystals and complex cell ordered superlattices

AU - Bevk, J.

AU - Mannaerts, J. P.

AU - Feldman, Leonard C

AU - Davidson, B. A.

AU - Ourmazd, A.

PY - 1986

Y1 - 1986

N2 - We report the first successful synthesis of ordered GeSi superlattices grown on (001) Si substrates by molecular beam epitaxy. Two types of structures were prepared and characterized: superlattices with one-dimensional periodicity of one unit cell (GeGeSiSi.) and complex cell superlattices made up of sublayers of pure Si and alternating bilayers of Ge and Si. In the first case, the artificial stacking in the [001] direction results in a vertical array of alternating Ge and Si monolayers parallel to the (110) or (11̄0) planes. In spite of the lattice mismatch of 4.2%, Rutherford backscattering and channeling experiments indicate high quality crystallinity in both types of structures. Long-range order is deduced from the electron diffraction patterns that exhibit characteristic superlattice reflections and from high resolution lattice imaging. The precise deposition control on the scale of a fraction of a monolayer should allow band structure engineering in this and in other related systems and in turn tailoring of the transport and optical properties over a wide range.

AB - We report the first successful synthesis of ordered GeSi superlattices grown on (001) Si substrates by molecular beam epitaxy. Two types of structures were prepared and characterized: superlattices with one-dimensional periodicity of one unit cell (GeGeSiSi.) and complex cell superlattices made up of sublayers of pure Si and alternating bilayers of Ge and Si. In the first case, the artificial stacking in the [001] direction results in a vertical array of alternating Ge and Si monolayers parallel to the (110) or (11̄0) planes. In spite of the lattice mismatch of 4.2%, Rutherford backscattering and channeling experiments indicate high quality crystallinity in both types of structures. Long-range order is deduced from the electron diffraction patterns that exhibit characteristic superlattice reflections and from high resolution lattice imaging. The precise deposition control on the scale of a fraction of a monolayer should allow band structure engineering in this and in other related systems and in turn tailoring of the transport and optical properties over a wide range.

UR - http://www.scopus.com/inward/record.url?scp=0242295198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242295198&partnerID=8YFLogxK

U2 - 10.1063/1.97143

DO - 10.1063/1.97143

M3 - Article

AN - SCOPUS:0242295198

VL - 49

SP - 286

EP - 288

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -