The metallization of Hf O2 Ge by Al at room temperature was studied using photoemission and inverse photoemission. Upon deposition, Al reduces the Ge Ox interfacial layer between Ge and Hf O2, and a thin Al2 O3 layer is formed at the AlHf O2 interface. The band alignment across the AlHf O2 Ge stacks is also addressed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)