GeOx interface layer reduction upon Al-gate deposition on a HfO2 GeOx/Ge (001) stack

Sylvie Rangan, Eric Bersch, Robert Allen Bartynski, Eric Garfunkel, Elio Vescovo

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The metallization of Hf O2 Ge by Al at room temperature was studied using photoemission and inverse photoemission. Upon deposition, Al reduces the Ge Ox interfacial layer between Ge and Hf O2, and a thin Al2 O3 layer is formed at the AlHf O2 interface. The band alignment across the AlHf O2 Ge stacks is also addressed.

Original languageEnglish
Article number172906
JournalApplied Physics Letters
Volume92
Issue number17
DOIs
Publication statusPublished - 2008

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photoelectric emission
alignment
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

GeOx interface layer reduction upon Al-gate deposition on a HfO2 GeOx/Ge (001) stack. / Rangan, Sylvie; Bersch, Eric; Bartynski, Robert Allen; Garfunkel, Eric; Vescovo, Elio.

In: Applied Physics Letters, Vol. 92, No. 17, 172906, 2008.

Research output: Contribution to journalArticle

Rangan, Sylvie ; Bersch, Eric ; Bartynski, Robert Allen ; Garfunkel, Eric ; Vescovo, Elio. / GeOx interface layer reduction upon Al-gate deposition on a HfO2 GeOx/Ge (001) stack. In: Applied Physics Letters. 2008 ; Vol. 92, No. 17.
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