Germanium-based porous semiconductors from molecular Zintl anions

Gerasimos S. Armatas, Mercouri G. Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingChapter

6 Citations (Scopus)

Abstract

This review highlights how molecular Zintl compounds can be used to create new materials with a variety of novel opto-electronic and gas absorption properties. The generality of the synthetic approach described in this chapter on coupling various group-IV Zintl clusters provides an important tool for the design of new kinds of periodically ordered mesoporous semiconductors with tunable chemical and physical properties. We illustrate the potential of Zintl compounds to produce highly porous non-oxidic semiconductors, and we also cover the recent advances in the development of mesoporous elemental-based, metal-chalcogenide, and binary intermetallic alloy materials. The principles behind this approach and some perspectives for application of the derived materials are discussed.

Original languageEnglish
Title of host publicationZintl Ions
Subtitle of host publicationPrinciples and Recent Developments
EditorsThomas Fassler
Pages133-154
Number of pages22
DOIs
Publication statusPublished - Aug 1 2011

Publication series

NameStructure and Bonding
Volume140
ISSN (Print)0081-5993
ISSN (Electronic)1616-8550

Keywords

  • Chalcogenide
  • Germanium compound
  • Mesoporous semiconductor
  • Self-assembly
  • Zintl compound

ASJC Scopus subject areas

  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

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  • Cite this

    Armatas, G. S., & Kanatzidis, M. G. (2011). Germanium-based porous semiconductors from molecular Zintl anions. In T. Fassler (Ed.), Zintl Ions: Principles and Recent Developments (pp. 133-154). (Structure and Bonding; Vol. 140). https://doi.org/10.1007/430_2010_22