Germanium-based porous semiconductors from molecular Zintl anions

Gerasimos S. Armatas, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingChapter

6 Citations (Scopus)

Abstract

This review highlights how molecular Zintl compounds can be used to create new materials with a variety of novel opto-electronic and gas absorption properties. The generality of the synthetic approach described in this chapter on coupling various group-IV Zintl clusters provides an important tool for the design of new kinds of periodically ordered mesoporous semiconductors with tunable chemical and physical properties. We illustrate the potential of Zintl compounds to produce highly porous non-oxidic semiconductors, and we also cover the recent advances in the development of mesoporous elemental-based, metal-chalcogenide, and binary intermetallic alloy materials. The principles behind this approach and some perspectives for application of the derived materials are discussed.

Original languageEnglish
Title of host publicationStructure and Bonding
Pages133-154
Number of pages22
Volume140
DOIs
Publication statusPublished - 2011

Publication series

NameStructure and Bonding
Volume140
ISSN (Print)00815993
ISSN (Electronic)16168550

Fingerprint

Germanium
Anions
germanium
Semiconductor materials
anions
chemical properties
intermetallics
Gas absorption
physical properties
Chemical properties
Intermetallics
Physical properties
Metals
electronics
gases
metals

Keywords

  • Chalcogenide
  • Germanium compound
  • Mesoporous semiconductor
  • Self-assembly
  • Zintl compound

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Spectroscopy

Cite this

Armatas, G. S., & Kanatzidis, M. G. (2011). Germanium-based porous semiconductors from molecular Zintl anions. In Structure and Bonding (Vol. 140, pp. 133-154). (Structure and Bonding; Vol. 140). https://doi.org/10.1007/430_2010_22

Germanium-based porous semiconductors from molecular Zintl anions. / Armatas, Gerasimos S.; Kanatzidis, Mercouri G.

Structure and Bonding. Vol. 140 2011. p. 133-154 (Structure and Bonding; Vol. 140).

Research output: Chapter in Book/Report/Conference proceedingChapter

Armatas, GS & Kanatzidis, MG 2011, Germanium-based porous semiconductors from molecular Zintl anions. in Structure and Bonding. vol. 140, Structure and Bonding, vol. 140, pp. 133-154. https://doi.org/10.1007/430_2010_22
Armatas GS, Kanatzidis MG. Germanium-based porous semiconductors from molecular Zintl anions. In Structure and Bonding. Vol. 140. 2011. p. 133-154. (Structure and Bonding). https://doi.org/10.1007/430_2010_22
Armatas, Gerasimos S. ; Kanatzidis, Mercouri G. / Germanium-based porous semiconductors from molecular Zintl anions. Structure and Bonding. Vol. 140 2011. pp. 133-154 (Structure and Bonding).
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