GexSi, _X/Si Strained-Layer Superlattice Grown by Molecular Beam Epitaxy

J. C. Bean, Leonard C Feldman, A. T. Fiory, S. Nakahara, I. K. Robinson

Research output: Contribution to journalArticle

535 Citations (Scopus)

Abstract

GexSi1-xfilms are grown on Si by molecular beam epitaxy and analyzed by Nomarski optical interference microscopy, Rutherford ion backscattering and channeling, x-ray diffraction, and transmission electron microscopy. The full range of alloy compositions will grow smoothly on silicon. GeSi1- x films with x0.5 can be grown free of dislocations by means of strained-layer epitaxy where lattice mismath is accommodated by tetragonal strain. Critical thickness and composition values are tabulated for strained-layer growth. Multiple strained layers are combined to form a GexSij _X/Si strained-layer superlattice.

Original languageEnglish
Pages (from-to)436-440
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume2
Issue number2
DOIs
Publication statusPublished - 1984

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Molecular beam epitaxy
molecular beam epitaxy
Light interference
Silicon
Backscattering
Chemical analysis
Dislocations (crystals)
Epitaxial growth
Crystal lattices
Microscopic examination
Diffraction
Ions
Transmission electron microscopy
X rays
epitaxy
backscattering
x ray diffraction
microscopy
interference
transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

GexSi, _X/Si Strained-Layer Superlattice Grown by Molecular Beam Epitaxy. / Bean, J. C.; Feldman, Leonard C; Fiory, A. T.; Nakahara, S.; Robinson, I. K.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 2, No. 2, 1984, p. 436-440.

Research output: Contribution to journalArticle

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AU - Robinson, I. K.

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