GexSi1-xfilms are grown on Si by molecular beam epitaxy and analyzed by Nomarski optical interference microscopy, Rutherford ion backscattering and channeling, x-ray diffraction, and transmission electron microscopy. The full range of alloy compositions will grow smoothly on silicon. GeSi1- x films with x0.5 can be grown free of dislocations by means of strained-layer epitaxy where lattice mismath is accommodated by tetragonal strain. Critical thickness and composition values are tabulated for strained-layer growth. Multiple strained layers are combined to form a GexSij _X/Si strained-layer superlattice.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1984|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films