Giant electrostriction in Gd-doped ceria

Roman Korobko, Anitha Patlolla, Anna Kossoy, Ellen Wachtel, Harry L. Tuller, Anatoly I. Frenkel, Igor Lubomirsky

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Gd-doped CeO2 exhibits an anomalously large electrostriction effect generating stress that can reach 500 MPa. In situ XANES measurements indicate that the stress develops in response to the rearrangement of cerium-oxygen vacancy pairs. This mechanism is fundamentally different from that of materials currently in use and suggests that Gd-doped ceria is a representative of a new family of high-performance electromechanical materials.

Original languageEnglish
Pages (from-to)5857-5861
Number of pages5
JournalAdvanced Materials
Volume24
Issue number43
DOIs
Publication statusPublished - Nov 14 2012

Keywords

  • XANES
  • doped ceria
  • electrostriction
  • point defects

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Korobko, R., Patlolla, A., Kossoy, A., Wachtel, E., Tuller, H. L., Frenkel, A. I., & Lubomirsky, I. (2012). Giant electrostriction in Gd-doped ceria. Advanced Materials, 24(43), 5857-5861. https://doi.org/10.1002/adma.201202270