Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities

E. F. Schubert, A. M. Vredenberg, N. E J Hunt, Y. H. Wong, P. C. Becker, J. M. Poate, D. C. Jacobson, Leonard C Feldman, G. J. Zydzik

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Abstract

The authors report on the spontaneous photon emission characteristics from Er in a Si/SiO2 cavity. They have realized Er-implanted resonant Fabry-Perot cavities consisting of SiO2 active regions and two Si/SiO2 distributed Bragg reflectors. Er was incorporated into the center SiO2 layer by ion implantation. Cavity-quality factors exceeding Q = 300 were achieved. Photoluminescence at room-temperature revealed a drastic enhancement of the luminescence intensity emitted along the optical axis of the cavity. The intensity of the resonant cavity structures was typically 1-2 orders of magnitude higher as compared to structures without a cavity.

Original languageEnglish
Pages (from-to)1381-1383
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number12
DOIs
Publication statusPublished - Jan 1 1992

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Schubert, E. F., Vredenberg, A. M., Hunt, N. E. J., Wong, Y. H., Becker, P. C., Poate, J. M., ... Zydzik, G. J. (1992). Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities. Applied Physics Letters, 61(12), 1381-1383. https://doi.org/10.1063/1.107544