Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities

E. F. Schubert, A. M. Vredenberg, N. E.J. Hunt, Y. H. Wong, P. C. Becker, J. M. Poate, D. C. Jacobson, L. C. Feldman, G. J. Zydzik

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Abstract

Si/SiO2 Fabry-Pérot microcavities with rare-earth-doped SiO2 active regions are realized for the first time. Cavity-quality factors exceeding Q=300 are achieved with structures consisting of two Si/SiO2 distributed Bragg reflectors and an Er-implanted (λ/2) SiO2 active region. The room-temperature photoluminescence intensity of the on-axis emission is 1-2 orders of magnitude higher for resonant cavity structures as compared to structures without a cavity.

Original languageEnglish
Pages (from-to)1381-1383
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number12
DOIs
Publication statusPublished - Dec 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Schubert, E. F., Vredenberg, A. M., Hunt, N. E. J., Wong, Y. H., Becker, P. C., Poate, J. M., Jacobson, D. C., Feldman, L. C., & Zydzik, G. J. (1992). Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities. Applied Physics Letters, 61(12), 1381-1383. https://doi.org/10.1063/1.107544