Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities

E. F. Schubert, A. M. Vredenberg, N. E.J. Hunt, Y. H. Wong, P. C. Becker, J. M. Poate, D. C. Jacobson, L. C. Feldman, G. J. Zydzik

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Abstract

Si/SiO2 Fabry-Pérot microcavities with rare-earth-doped SiO2 active regions are realized for the first time. Cavity-quality factors exceeding Q=300 are achieved with structures consisting of two Si/SiO2 distributed Bragg reflectors and an Er-implanted (λ/2) SiO2 active region. The room-temperature photoluminescence intensity of the on-axis emission is 1-2 orders of magnitude higher for resonant cavity structures as compared to structures without a cavity.

Original languageEnglish
Pages (from-to)1381-1383
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number12
DOIs
Publication statusPublished - Dec 1 1992

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Schubert, E. F., Vredenberg, A. M., Hunt, N. E. J., Wong, Y. H., Becker, P. C., Poate, J. M., Jacobson, D. C., Feldman, L. C., & Zydzik, G. J. (1992). Giant enhancement of luminescence intensity in Er-doped Si/SiO2 resonant cavities. Applied Physics Letters, 61(12), 1381-1383. https://doi.org/10.1063/1.107544