Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

Michael Engel, Damon B. Farmer, Jaione Tirapu Azpiroz, Jung Woo T. Seo, Joohoon Kang, Phaedon Avouris, Mark C Hersam, Ralph Krupke, Mathias Steiner

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Directed placement of solution-based nanomaterials at predefined locations with nanoscale precision limits bottom-up integration in semiconductor process technology. We report a method for electric-field-assisted placement of nanomaterials from solution by means of large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, and then are removed once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas >1 mm2. In order to demonstrate the broad applicability, we have assembled representative zero-dimensional, one-dimensional, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Ultimately, this method opens a route to bottom-up integration of nanomaterials for industry-scale applications.

Original languageEnglish
Article number4095
JournalNature Communications
Volume9
Issue number1
DOIs
Publication statusPublished - Dec 1 2018

Fingerprint

Graphite
Nanostructures
Nanostructured materials
graphene
Equipment and Supplies
Semiconductors
assemblies
industries
routes
Semiconductor materials
Nanoelectronics
electric fields
Substrates
synthesis
Industry
Electric fields
Technology

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Engel, M., Farmer, D. B., Azpiroz, J. T., Seo, J. W. T., Kang, J., Avouris, P., ... Steiner, M. (2018). Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration. Nature Communications, 9(1), [4095]. https://doi.org/10.1038/s41467-018-06604-4

Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration. / Engel, Michael; Farmer, Damon B.; Azpiroz, Jaione Tirapu; Seo, Jung Woo T.; Kang, Joohoon; Avouris, Phaedon; Hersam, Mark C; Krupke, Ralph; Steiner, Mathias.

In: Nature Communications, Vol. 9, No. 1, 4095, 01.12.2018.

Research output: Contribution to journalArticle

Engel, M, Farmer, DB, Azpiroz, JT, Seo, JWT, Kang, J, Avouris, P, Hersam, MC, Krupke, R & Steiner, M 2018, 'Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration', Nature Communications, vol. 9, no. 1, 4095. https://doi.org/10.1038/s41467-018-06604-4
Engel, Michael ; Farmer, Damon B. ; Azpiroz, Jaione Tirapu ; Seo, Jung Woo T. ; Kang, Joohoon ; Avouris, Phaedon ; Hersam, Mark C ; Krupke, Ralph ; Steiner, Mathias. / Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration. In: Nature Communications. 2018 ; Vol. 9, No. 1.
@article{b4c4b7dc7d0d4adfb70b6ff3222046d3,
title = "Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration",
abstract = "Directed placement of solution-based nanomaterials at predefined locations with nanoscale precision limits bottom-up integration in semiconductor process technology. We report a method for electric-field-assisted placement of nanomaterials from solution by means of large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, and then are removed once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas >1 mm2. In order to demonstrate the broad applicability, we have assembled representative zero-dimensional, one-dimensional, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Ultimately, this method opens a route to bottom-up integration of nanomaterials for industry-scale applications.",
author = "Michael Engel and Farmer, {Damon B.} and Azpiroz, {Jaione Tirapu} and Seo, {Jung Woo T.} and Joohoon Kang and Phaedon Avouris and Hersam, {Mark C} and Ralph Krupke and Mathias Steiner",
year = "2018",
month = "12",
day = "1",
doi = "10.1038/s41467-018-06604-4",
language = "English",
volume = "9",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

AU - Engel, Michael

AU - Farmer, Damon B.

AU - Azpiroz, Jaione Tirapu

AU - Seo, Jung Woo T.

AU - Kang, Joohoon

AU - Avouris, Phaedon

AU - Hersam, Mark C

AU - Krupke, Ralph

AU - Steiner, Mathias

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Directed placement of solution-based nanomaterials at predefined locations with nanoscale precision limits bottom-up integration in semiconductor process technology. We report a method for electric-field-assisted placement of nanomaterials from solution by means of large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, and then are removed once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas >1 mm2. In order to demonstrate the broad applicability, we have assembled representative zero-dimensional, one-dimensional, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Ultimately, this method opens a route to bottom-up integration of nanomaterials for industry-scale applications.

AB - Directed placement of solution-based nanomaterials at predefined locations with nanoscale precision limits bottom-up integration in semiconductor process technology. We report a method for electric-field-assisted placement of nanomaterials from solution by means of large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, and then are removed once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas >1 mm2. In order to demonstrate the broad applicability, we have assembled representative zero-dimensional, one-dimensional, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Ultimately, this method opens a route to bottom-up integration of nanomaterials for industry-scale applications.

UR - http://www.scopus.com/inward/record.url?scp=85054428402&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054428402&partnerID=8YFLogxK

U2 - 10.1038/s41467-018-06604-4

DO - 10.1038/s41467-018-06604-4

M3 - Article

C2 - 30291247

AN - SCOPUS:85054428402

VL - 9

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

IS - 1

M1 - 4095

ER -