Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Goki Eda, Arokia Nathan, Paul Wöbkenberg, Florian Colleaux, Khashayar Ghaffarzadeh, Thomas D. Anthopoulos, Manish Chhowalla

Research output: Contribution to journal › Article

31 Citations (Scopus)

Abstract

We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

Original languageEnglish
Article number133108
JournalApplied Physics Letters
Volume102
Issue number13
DOIs
Publication statusPublished - Apr 1 2013

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graphene
field effect transistors
oxides
hydrogen plasma
thin films
oxide films
dielectric properties
insulators
anisotropy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Eda, G., Nathan, A., Wöbkenberg, P., Colleaux, F., Ghaffarzadeh, K., Anthopoulos, T. D., & Chhowalla, M. (2013). Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. Applied Physics Letters, 102(13), [133108]. https://doi.org/10.1063/1.4799970

Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. / Eda, Goki; Nathan, Arokia; Wöbkenberg, Paul; Colleaux, Florian; Ghaffarzadeh, Khashayar; Anthopoulos, Thomas D.; Chhowalla, Manish.

In: Applied Physics Letters, Vol. 102, No. 13, 133108, 01.04.2013.

Research output: Contribution to journal › Article

Eda, G, Nathan, A, Wöbkenberg, P, Colleaux, F, Ghaffarzadeh, K, Anthopoulos, TD & Chhowalla, M 2013, 'Graphene oxide gate dielectric for graphene-based monolithic field effect transistors', Applied Physics Letters, vol. 102, no. 13, 133108. https://doi.org/10.1063/1.4799970
Eda G, Nathan A, Wöbkenberg P, Colleaux F, Ghaffarzadeh K, Anthopoulos TD et al. Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. Applied Physics Letters. 2013 Apr 1;102(13). 133108. https://doi.org/10.1063/1.4799970
Eda, Goki ; Nathan, Arokia ; Wöbkenberg, Paul ; Colleaux, Florian ; Ghaffarzadeh, Khashayar ; Anthopoulos, Thomas D. ; Chhowalla, Manish. / Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. In: Applied Physics Letters. 2013 ; Vol. 102, No. 13.
@article{d0d009a31c6d47e78b8cb7c8098ce99a,
title = "Graphene oxide gate dielectric for graphene-based monolithic field effect transistors",
abstract = "We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.",
author = "Goki Eda and Arokia Nathan and Paul W{\"o}bkenberg and Florian Colleaux and Khashayar Ghaffarzadeh and Anthopoulos, {Thomas D.} and Manish Chhowalla",
year = "2013",
month = "4",
day = "1",
doi = "10.1063/1.4799970",
language = "English",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

AU - Eda, Goki

AU - Nathan, Arokia

AU - Wöbkenberg, Paul

AU - Colleaux, Florian

AU - Ghaffarzadeh, Khashayar

AU - Anthopoulos, Thomas D.

AU - Chhowalla, Manish

PY - 2013/4/1

Y1 - 2013/4/1

N2 - We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

AB - We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

UR - http://www.scopus.com/inward/record.url?scp=84876113715&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876113715&partnerID=8YFLogxK

U2 - 10.1063/1.4799970

DO - 10.1063/1.4799970

M3 - Article

AN - SCOPUS:84876113715

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 133108

ER -

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