Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Goki Eda, Arokia Nathan, Paul Wöbkenberg, Florian Colleaux, Khashayar Ghaffarzadeh, Thomas D. Anthopoulos, Manish Chhowalla

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

Original languageEnglish
Article number133108
JournalApplied Physics Letters
Volume102
Issue number13
DOIs
Publication statusPublished - Apr 1 2013

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graphene
field effect transistors
oxides
hydrogen plasma
thin films
oxide films
dielectric properties
insulators
anisotropy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Eda, G., Nathan, A., Wöbkenberg, P., Colleaux, F., Ghaffarzadeh, K., Anthopoulos, T. D., & Chhowalla, M. (2013). Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. Applied Physics Letters, 102(13), [133108]. https://doi.org/10.1063/1.4799970

Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. / Eda, Goki; Nathan, Arokia; Wöbkenberg, Paul; Colleaux, Florian; Ghaffarzadeh, Khashayar; Anthopoulos, Thomas D.; Chhowalla, Manish.

In: Applied Physics Letters, Vol. 102, No. 13, 133108, 01.04.2013.

Research output: Contribution to journalArticle

Eda, G, Nathan, A, Wöbkenberg, P, Colleaux, F, Ghaffarzadeh, K, Anthopoulos, TD & Chhowalla, M 2013, 'Graphene oxide gate dielectric for graphene-based monolithic field effect transistors', Applied Physics Letters, vol. 102, no. 13, 133108. https://doi.org/10.1063/1.4799970
Eda G, Nathan A, Wöbkenberg P, Colleaux F, Ghaffarzadeh K, Anthopoulos TD et al. Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. Applied Physics Letters. 2013 Apr 1;102(13). 133108. https://doi.org/10.1063/1.4799970
Eda, Goki ; Nathan, Arokia ; Wöbkenberg, Paul ; Colleaux, Florian ; Ghaffarzadeh, Khashayar ; Anthopoulos, Thomas D. ; Chhowalla, Manish. / Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. In: Applied Physics Letters. 2013 ; Vol. 102, No. 13.
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