TY - JOUR
T1 - Graphene oxide gate dielectric for graphene-based monolithic field effect transistors
AU - Eda, Goki
AU - Nathan, Arokia
AU - Wöbkenberg, Paul
AU - Colleaux, Florian
AU - Ghaffarzadeh, Khashayar
AU - Anthopoulos, Thomas D.
AU - Chhowalla, Manish
PY - 2013/4/1
Y1 - 2013/4/1
N2 - We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.
AB - We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.
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U2 - 10.1063/1.4799970
DO - 10.1063/1.4799970
M3 - Article
AN - SCOPUS:84876113715
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
M1 - 133108
ER -