Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Goki Eda, Arokia Nathan, Paul Wöbkenberg, Florian Colleaux, Khashayar Ghaffarzadeh, Thomas D. Anthopoulos, Manish Chhowalla

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Abstract

We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

Original languageEnglish
Article number133108
JournalApplied Physics Letters
Volume102
Issue number13
DOIs
Publication statusPublished - Apr 1 2013

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Eda, G., Nathan, A., Wöbkenberg, P., Colleaux, F., Ghaffarzadeh, K., Anthopoulos, T. D., & Chhowalla, M. (2013). Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. Applied Physics Letters, 102(13), [133108]. https://doi.org/10.1063/1.4799970