Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Goki Eda; Arokia Nathan; Paul Wöbkenberg; Florian Colleaux; Khashayar Ghaffarzadeh; Thomas D. Anthopoulos; Manish Chhowalla

doi:10.1063/1.4799970

Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Goki Eda, Arokia Nathan, Paul Wöbkenberg, Florian Colleaux, Khashayar Ghaffarzadeh, Thomas D. Anthopoulos, Manish Chhowalla

Rutgers University

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

Original language	English
Article number	133108
Journal	Applied Physics Letters
Volume	102
Issue number	13
DOIs	https://doi.org/10.1063/1.4799970
Publication status	Published - Apr 1 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.",

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AU - Eda, Goki

AU - Nathan, Arokia

AU - Wöbkenberg, Paul

AU - Colleaux, Florian

AU - Ghaffarzadeh, Khashayar

AU - Anthopoulos, Thomas D.

AU - Chhowalla, Manish

N1 - Funding Information: G.E. acknowledges the Royal Society for the Newton International Fellowship and financial support from the Centre for Advanced Structural Ceramics (CASC) at Imperial College London. G.E. also acknowledges Singapore National Research Foundation for partly funding the research under NRF Research Fellowship (NRF-NRFF2011-02). M.C. acknowledges support from NSF ECCS Award 1128335.

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N2 - We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

AB - We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

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Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Abstract

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