Graphene-Silicon Heterostructures at the Two-Dimensional Limit

Brian Kiraly, Andrew J. Mannix, Mark C Hersam, Nathan P. Guisinger

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The integration of heterogeneous two-dimensional materials has the potential to yield electronic behavior approaching theoretical limits and facilitate the exploration of new fundamental physical phenomena. Here, we report the integration of graphene with two-dimensional, semiconducting crystalline silicon. Sequential deposition of carbon and silicon on Ag(111) in ultrahigh vacuum results in the synthesis of both lateral and vertical graphene-silicon heterostructures. The one-dimensional in-plane interfaces demonstrate atomically precise material transitions both structurally and electronically. The vertical heterostructures show noninteracting van der Waals behavior as shown by energetically resolved scanning tunneling microscopy coupled with ex-situ Raman analysis. The pristine and direct integration of graphene with two-dimensional, semiconducting crystalline silicon couples two of the most studied electronic materials into a hybrid structure with high potential for next-generation nanoelectronics.

Original languageEnglish
Pages (from-to)6085-6090
Number of pages6
JournalChemistry of Materials
Volume27
Issue number17
DOIs
Publication statusPublished - Sep 8 2015

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Graphite
Silicon
Graphene
Heterojunctions
Crystalline materials
Nanoelectronics
Ultrahigh vacuum
Scanning tunneling microscopy
Carbon

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Graphene-Silicon Heterostructures at the Two-Dimensional Limit. / Kiraly, Brian; Mannix, Andrew J.; Hersam, Mark C; Guisinger, Nathan P.

In: Chemistry of Materials, Vol. 27, No. 17, 08.09.2015, p. 6085-6090.

Research output: Contribution to journalArticle

Kiraly, Brian ; Mannix, Andrew J. ; Hersam, Mark C ; Guisinger, Nathan P. / Graphene-Silicon Heterostructures at the Two-Dimensional Limit. In: Chemistry of Materials. 2015 ; Vol. 27, No. 17. pp. 6085-6090.
@article{9ec3b108192549459e45ccc466f94e33,
title = "Graphene-Silicon Heterostructures at the Two-Dimensional Limit",
abstract = "The integration of heterogeneous two-dimensional materials has the potential to yield electronic behavior approaching theoretical limits and facilitate the exploration of new fundamental physical phenomena. Here, we report the integration of graphene with two-dimensional, semiconducting crystalline silicon. Sequential deposition of carbon and silicon on Ag(111) in ultrahigh vacuum results in the synthesis of both lateral and vertical graphene-silicon heterostructures. The one-dimensional in-plane interfaces demonstrate atomically precise material transitions both structurally and electronically. The vertical heterostructures show noninteracting van der Waals behavior as shown by energetically resolved scanning tunneling microscopy coupled with ex-situ Raman analysis. The pristine and direct integration of graphene with two-dimensional, semiconducting crystalline silicon couples two of the most studied electronic materials into a hybrid structure with high potential for next-generation nanoelectronics.",
author = "Brian Kiraly and Mannix, {Andrew J.} and Hersam, {Mark C} and Guisinger, {Nathan P.}",
year = "2015",
month = "9",
day = "8",
doi = "10.1021/acs.chemmater.5b02602",
language = "English",
volume = "27",
pages = "6085--6090",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "17",

}

TY - JOUR

T1 - Graphene-Silicon Heterostructures at the Two-Dimensional Limit

AU - Kiraly, Brian

AU - Mannix, Andrew J.

AU - Hersam, Mark C

AU - Guisinger, Nathan P.

PY - 2015/9/8

Y1 - 2015/9/8

N2 - The integration of heterogeneous two-dimensional materials has the potential to yield electronic behavior approaching theoretical limits and facilitate the exploration of new fundamental physical phenomena. Here, we report the integration of graphene with two-dimensional, semiconducting crystalline silicon. Sequential deposition of carbon and silicon on Ag(111) in ultrahigh vacuum results in the synthesis of both lateral and vertical graphene-silicon heterostructures. The one-dimensional in-plane interfaces demonstrate atomically precise material transitions both structurally and electronically. The vertical heterostructures show noninteracting van der Waals behavior as shown by energetically resolved scanning tunneling microscopy coupled with ex-situ Raman analysis. The pristine and direct integration of graphene with two-dimensional, semiconducting crystalline silicon couples two of the most studied electronic materials into a hybrid structure with high potential for next-generation nanoelectronics.

AB - The integration of heterogeneous two-dimensional materials has the potential to yield electronic behavior approaching theoretical limits and facilitate the exploration of new fundamental physical phenomena. Here, we report the integration of graphene with two-dimensional, semiconducting crystalline silicon. Sequential deposition of carbon and silicon on Ag(111) in ultrahigh vacuum results in the synthesis of both lateral and vertical graphene-silicon heterostructures. The one-dimensional in-plane interfaces demonstrate atomically precise material transitions both structurally and electronically. The vertical heterostructures show noninteracting van der Waals behavior as shown by energetically resolved scanning tunneling microscopy coupled with ex-situ Raman analysis. The pristine and direct integration of graphene with two-dimensional, semiconducting crystalline silicon couples two of the most studied electronic materials into a hybrid structure with high potential for next-generation nanoelectronics.

UR - http://www.scopus.com/inward/record.url?scp=84941044193&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941044193&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.5b02602

DO - 10.1021/acs.chemmater.5b02602

M3 - Article

AN - SCOPUS:84941044193

VL - 27

SP - 6085

EP - 6090

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 17

ER -