Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy

Weijie Lu, Leonard C Feldman, Y. Song, S. Dhar, W. E. Collins, W. C. Mitchel, J. R. Williams

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Graphitic features are detected on 4H-SiC surface following oxidation and etching using surface enhanced Raman spectroscopy (SERS). The electronic state of the carbon is sp 2 on both the Si- and C-faces of 4H-SiC. The structures of the "carbon clusters" consist of two-dimensional graphitic flakes less than 2 nm and one-dimensional polyenes. The degree of graphitization on the C-face SiC is higher than those on the Si-face SiC. This study provides experimental evidence for "carbon clusters" existing on SiC surfaces following oxidation at atmospheric pressure and demonstrates that SERS is an effective technique to probe low concentration species on the SiC surface.

Original languageEnglish
Pages (from-to)3495-3497
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number16
DOIs
Publication statusPublished - Oct 18 2004

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Raman spectroscopy
etching
oxidation
carbon
graphitization
flakes
low concentrations
atmospheric pressure
probes
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy. / Lu, Weijie; Feldman, Leonard C; Song, Y.; Dhar, S.; Collins, W. E.; Mitchel, W. C.; Williams, J. R.

In: Applied Physics Letters, Vol. 85, No. 16, 18.10.2004, p. 3495-3497.

Research output: Contribution to journalArticle

Lu, Weijie ; Feldman, Leonard C ; Song, Y. ; Dhar, S. ; Collins, W. E. ; Mitchel, W. C. ; Williams, J. R. / Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy. In: Applied Physics Letters. 2004 ; Vol. 85, No. 16. pp. 3495-3497.
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