Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy

Weijie Lu; L. C. Feldman; Y. Song; S. Dhar; W. E. Collins; W. C. Mitchel; J. R. Williams

doi:10.1063/1.1804610

Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy

Weijie Lu, L. C. Feldman, Y. Song, S. Dhar, W. E. Collins, W. C. Mitchel, J. R. Williams

Rutgers University

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

Graphitic features are detected on 4H-SiC surface following oxidation and etching using surface enhanced Raman spectroscopy (SERS). The electronic state of the carbon is sp ² on both the Si- and C-faces of 4H-SiC. The structures of the "carbon clusters" consist of two-dimensional graphitic flakes less than 2 nm and one-dimensional polyenes. The degree of graphitization on the C-face SiC is higher than those on the Si-face SiC. This study provides experimental evidence for "carbon clusters" existing on SiC surfaces following oxidation at atmospheric pressure and demonstrates that SERS is an effective technique to probe low concentration species on the SiC surface.

Original language	English
Pages (from-to)	3495-3497
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	16
DOIs	https://doi.org/10.1063/1.1804610
Publication status	Published - Oct 18 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy",

abstract = "Graphitic features are detected on 4H-SiC surface following oxidation and etching using surface enhanced Raman spectroscopy (SERS). The electronic state of the carbon is sp 2 on both the Si- and C-faces of 4H-SiC. The structures of the {"}carbon clusters{"} consist of two-dimensional graphitic flakes less than 2 nm and one-dimensional polyenes. The degree of graphitization on the C-face SiC is higher than those on the Si-face SiC. This study provides experimental evidence for {"}carbon clusters{"} existing on SiC surfaces following oxidation at atmospheric pressure and demonstrates that SERS is an effective technique to probe low concentration species on the SiC surface.",

author = "Weijie Lu and Feldman, {L. C.} and Y. Song and S. Dhar and Collins, {W. E.} and Mitchel, {W. C.} and Williams, {J. R.}",

note = "Funding Information: This work has been supported by DARPA Contract No. N00014-02-1-0628 (Ingham Mack and John Zolper, technical program monitors). W.L. was supported by the 2003 National Research Council/Air Force Research Laboratory Summer Faculty Research Fellowship. The authors thank Jason Reber and John Busbee at the Air Force Research Laboratory for assistance in Raman spectra measurements, and G. R. Landis at University of Dayton Research Institute for Ag film deposition. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2004",

month = oct,

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doi = "10.1063/1.1804610",

language = "English",

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T1 - Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy

AU - Lu, Weijie

AU - Feldman, L. C.

AU - Song, Y.

AU - Dhar, S.

AU - Collins, W. E.

AU - Mitchel, W. C.

AU - Williams, J. R.

N1 - Funding Information: This work has been supported by DARPA Contract No. N00014-02-1-0628 (Ingham Mack and John Zolper, technical program monitors). W.L. was supported by the 2003 National Research Council/Air Force Research Laboratory Summer Faculty Research Fellowship. The authors thank Jason Reber and John Busbee at the Air Force Research Laboratory for assistance in Raman spectra measurements, and G. R. Landis at University of Dayton Research Institute for Ag film deposition. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2004/10/18

Y1 - 2004/10/18

N2 - Graphitic features are detected on 4H-SiC surface following oxidation and etching using surface enhanced Raman spectroscopy (SERS). The electronic state of the carbon is sp 2 on both the Si- and C-faces of 4H-SiC. The structures of the "carbon clusters" consist of two-dimensional graphitic flakes less than 2 nm and one-dimensional polyenes. The degree of graphitization on the C-face SiC is higher than those on the Si-face SiC. This study provides experimental evidence for "carbon clusters" existing on SiC surfaces following oxidation at atmospheric pressure and demonstrates that SERS is an effective technique to probe low concentration species on the SiC surface.

AB - Graphitic features are detected on 4H-SiC surface following oxidation and etching using surface enhanced Raman spectroscopy (SERS). The electronic state of the carbon is sp 2 on both the Si- and C-faces of 4H-SiC. The structures of the "carbon clusters" consist of two-dimensional graphitic flakes less than 2 nm and one-dimensional polyenes. The degree of graphitization on the C-face SiC is higher than those on the Si-face SiC. This study provides experimental evidence for "carbon clusters" existing on SiC surfaces following oxidation at atmospheric pressure and demonstrates that SERS is an effective technique to probe low concentration species on the SiC surface.

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IS - 16

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Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy

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