Growth and characterization of ultrathin nitrided silicon oxide films

E. P. Gusev, H. C. Lu, Eric Garfunkel, T. Gustafsson, M. L. Green

Research output: Contribution to journalArticle

181 Citations (Scopus)

Abstract

This paper reviews recent progress in understanding microstructural and growth-mechanistic aspects of ultrathin (2O, and N2 as well as a variety of deposition methods. We show that a basic understanding of the gas-phase and thin-film oxygen and nitrogen incorporation chemistries facilities the processing of layered oxynitride nanostructures with desirable electrical properties.

Original languageEnglish
Pages (from-to)265-286
Number of pages22
JournalIBM Journal of Research and Development
Volume43
Issue number3
Publication statusPublished - May 1999

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ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Gusev, E. P., Lu, H. C., Garfunkel, E., Gustafsson, T., & Green, M. L. (1999). Growth and characterization of ultrathin nitrided silicon oxide films. IBM Journal of Research and Development, 43(3), 265-286.