Growth and characterization of ultrathin nitrided silicon oxide films

E. P. Gusev, H. C. Lu, E. L. Garfunkel, T. Gustafsson, M. L. Green

Research output: Contribution to journalArticle

181 Citations (Scopus)

Abstract

This paper reviews recent progress in understanding microstructural and growth-mechanistic aspects of ultrathin (<4 nm) oxynitride films for gate dielectric applications. Different techniques for characterizing these films are summarized. We discuss several nitridation methods, including thermal (oxy)nitridation in NO, N2O, and N2 as well as a variety of deposition methods. We show that a basic understanding of the gas-phase and thin-film oxygen and nitrogen incorporation chemistries facilities the processing of layered oxynitride nanostructures with desirable electrical properties.

Original languageEnglish
Pages (from-to)265-286
Number of pages22
JournalIBM Journal of Research and Development
Volume43
Issue number3
DOIs
Publication statusPublished - May 1999

ASJC Scopus subject areas

  • Computer Science(all)

Fingerprint Dive into the research topics of 'Growth and characterization of ultrathin nitrided silicon oxide films'. Together they form a unique fingerprint.

  • Cite this