Growth and characterization of ultrathin nitrided silicon oxide films

E. P. Gusev, H. C. Lu, Eric Garfunkel, T. Gustafsson, M. L. Green

Research output: Contribution to journalArticle

180 Citations (Scopus)

Abstract

This paper reviews recent progress in understanding microstructural and growth-mechanistic aspects of ultrathin (2O, and N2 as well as a variety of deposition methods. We show that a basic understanding of the gas-phase and thin-film oxygen and nitrogen incorporation chemistries facilities the processing of layered oxynitride nanostructures with desirable electrical properties.

Original languageEnglish
Pages (from-to)265-286
Number of pages22
JournalIBM Journal of Research and Development
Volume43
Issue number3
Publication statusPublished - May 1999

Fingerprint

Silicon oxides
Oxide films
Nanostructures
Electric properties
Nitrogen
Thin films
Oxygen
Processing
Gases

ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Gusev, E. P., Lu, H. C., Garfunkel, E., Gustafsson, T., & Green, M. L. (1999). Growth and characterization of ultrathin nitrided silicon oxide films. IBM Journal of Research and Development, 43(3), 265-286.

Growth and characterization of ultrathin nitrided silicon oxide films. / Gusev, E. P.; Lu, H. C.; Garfunkel, Eric; Gustafsson, T.; Green, M. L.

In: IBM Journal of Research and Development, Vol. 43, No. 3, 05.1999, p. 265-286.

Research output: Contribution to journalArticle

Gusev, EP, Lu, HC, Garfunkel, E, Gustafsson, T & Green, ML 1999, 'Growth and characterization of ultrathin nitrided silicon oxide films', IBM Journal of Research and Development, vol. 43, no. 3, pp. 265-286.
Gusev, E. P. ; Lu, H. C. ; Garfunkel, Eric ; Gustafsson, T. ; Green, M. L. / Growth and characterization of ultrathin nitrided silicon oxide films. In: IBM Journal of Research and Development. 1999 ; Vol. 43, No. 3. pp. 265-286.
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